3035 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3035
Código: 3035
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.4 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 4.1 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 12.5 nC
Tiempo de subida (tr): 4.5 nS
Conductancia de drenaje-sustrato (Cd): 105 pF
Resistencia entre drenaje y fuente RDS(on): 0.065 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET 3035
3035 Datasheet (PDF)
3035.pdf
GOFORDG23043035Description DThe 3035 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load Gswitch or in PWM applications. General Features SSchematic diagram VDSS RDS(ON) RDS(ON) ID @ (Typ) @-4.5V -10V (Typ)m m-30V 60 48 -4.1 A3035 High power and current handing capability Lead free produc
2sk3035.pdf
Power F-MOS FETs2SK3035Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance6.50.12.30.1 No secondary breakdown 5.30.14.350.1 Low-voltage drive 0.50.1 High electrostatic breakdown voltage Applications Contactless relay1.00.1 Diving circuit for a solenoid0.10.0520.50.1
dmn3035lwn.pdf
DMN3035LWN 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) MAX TA = +25C Low Input Capacitance 35m @ VGS = 10V 5.5A Fast Switching Speed 30V 45m @ VGS = 4.5V 4.9A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descriptio
dmp3035sfg.pdf
DMP3035SFG30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = 25C density end products 20m @ VGS = -10V -9.5 A Occupies just 33% of the board area occupied by SO-8 enabling -
dmc3035lsd.pdf
DMC3035LSDCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Complementary Pair MOSFETs Case: SOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 N-Channel: 35m @ 10V Moisture Sensitivity: Level 1 pe
zxtn3035clp.pdf
A Product Line ofDiodes IncorporatedZXTN3035CLP 35V NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data Ultra-Small Leadless Surface Mount Package Case: X1-DFN1006-3 ESD: HBM 8kV, MM 400V Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 3.0A Maximum Peak Collector Current Moisture Sensitivity: Level 1
dmp3035lss.pdf
DMP3035LSSSINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SO-8 14m @ VGS = -20V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 18m @ VGS = -10V Moisture Sensitivity: Level 1 per J-STD-020
g3035-23.pdf
GOFORDG3035-23Description DThe G3035-23 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load Gswitch or in PWM applications. General Features SSchematic diagram VDSS RDS(ON) RDS(ON) ID @ (Typ) @-4.5V -10V (Typ)m m -5-30V 58 40 A High power and current handing capability Lead free product is ac
nce3035g.pdf
Pb Free Producthttp://www.ncepower.com NCE3035GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3035G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =35A RDS(ON)
nce3035q.pdf
Pb Free Producthttp://www.ncepower.com NCE3035QNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3035Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =35A RDS(ON)
nce3035g.pdf
NCE3035Gwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 6030 31 nC0.009 at VGS = 4.5 V 48APPLICATIONS OR-ingDFN5X6 Single DD ServerD 8 DC/DCD 7D 65G12 SS3 SN
2sk3035.pdf
isc N-Channel MOSFET Transistor 2SK3035FEATURESDrain Current : I =3A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R =1.1m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
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