3035 Todos los transistores

 ..1. Size:1918K  goford
 3035.pdf

GOFORD G2304 3035 Description D The 3035 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G switch or in PWM applications. General Features S Schematic diagram VDSS RDS(ON) RDS(ON) ID @ (Typ) @ -4.5V -10V (Typ) m m -30V 60 48 -4.1 A 3035 High power and current handing capability Lead free produc

 0.1. Size:179K  1
 2sk3035.pdf

Power F-MOS FETs 2SK3035 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance 6.5 0.1 2.3 0.1 No secondary breakdown 5.3 0.1 4.35 0.1 Low-voltage drive 0.5 0.1 High electrostatic breakdown voltage Applications Contactless relay 1.0 0.1 Diving circuit for a solenoid 0.1 0.05 2 0.5 0.1

 0.2. Size:545K  diodes
 dmn3035lwn.pdf

DMN3035LWN 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) MAX TA = +25 C Low Input Capacitance 35m @ VGS = 10V 5.5A Fast Switching Speed 30V 45m @ VGS = 4.5V 4.9A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descriptio

 0.3. Size:194K  diodes
 dmp3035sfg.pdf

DMP3035SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = 25 C density end products 20m @ VGS = -10V -9.5 A Occupies just 33% of the board area occupied by SO-8 enabling -

 0.4. Size:254K  diodes
 dmc3035lsd.pdf

DMC3035LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Complementary Pair MOSFETs Case SOP-8L Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 N-Channel 35m @ 10V Moisture Sensitivity Level 1 pe

 0.5. Size:245K  diodes
 zxtn3035clp.pdf

A Product Line of Diodes Incorporated ZXTN3035CLP 35V NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data Ultra-Small Leadless Surface Mount Package Case X1-DFN1006-3 ESD HBM 8kV, MM 400V Case Material Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 3.0A Maximum Peak Collector Current Moisture Sensitivity Level 1

 0.6. Size:169K  diodes
 dmp3035lss.pdf

 0.7. Size:2021K  goford
 g3035-23.pdf

GOFORD G3035-23 Description D The G3035-23 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G switch or in PWM applications. General Features S Schematic diagram VDSS RDS(ON) RDS(ON) ID @ (Typ) @ -4.5V -10V (Typ) m m -5 -30V 58 40 A High power and current handing capability Lead free product is ac

 0.8. Size:331K  ncepower
 nce3035g.pdf

Pb Free Product http //www.ncepower.com NCE3035G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3035G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =35A RDS(ON)

 0.9. Size:327K  ncepower
 nce3035q.pdf

Pb Free Product http //www.ncepower.com NCE3035Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3035Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =35A RDS(ON)

 0.10. Size:1124K  cn vbsemi
 nce3035g.pdf

NCE3035G www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 60 30 31 nC 0.009 at VGS = 4.5 V 48 APPLICATIONS OR-ing DFN5X6 Single D D Server D 8 DC/DC D 7 D 6 5 G 1 2 S S 3 S N

 0.11. Size:286K  inchange semiconductor
 2sk3035.pdf

isc N-Channel MOSFET Transistor 2SK3035 FEATURES Drain Current I =3A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R =1.1m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d