G29 Todos los transistores

 ..1. Size:1584K  goford
 g29.pdf

GOFORD G29 D Description The G29 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a S load switch or in PWM applications. Schematic diagram General Features VDSS RDS(ON) RDS(ON) ID (Typ) @-2.5V @-4.5V (Typ) -18V 29m 36m -5.8 A G29 High Po

 0.1. Size:135K  philips
 bls6g2933s-130.pdf

BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode o

 0.2. Size:100K  nxp
 bls6g2933p-200.pdf

BLS6G2933P-200 LDMOS S-Band radar pallet amplifier Rev. 01 28 May 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS amplifier pallet intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB test circuit. Mode of operation f VDS PL(1dB) Gp D IDq (GHz)

 0.3. Size:121K  nxp
 bls7g2933s-150.pdf

BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mod

 0.4. Size:129K  china
 3cg2907a.pdf

 0.5. Size:112K  china
 3cg2905.pdf

 0.6. Size:116K  china
 3cg2907.pdf

3CG2907 PNP PCM 400 mW ICM 600 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 65 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.2 A ICEO VCE=10V 0.5 A IEBO VEB=2V 0.2 A VBEsat 1.0 IC=30mA V IB=3mA VCEsat

 0.7. Size:97K  foshan
 3cg298.pdf

2SA298(3CG298) PNP /SILICON PNP TRANSISTOR , /Purpose Audio frequency general purpose, driver stage amplifier applications. , , h , FE Features High voltage and high current, excellent h linearity, low noise. FE /Absolute maximum ratings(Ta=25 )

 0.8. Size:233K  foshan
 3dg2909.pdf

2SC2909(3DG2909) NPN /SILICON NPN TRANSISTOR 60 Purpose High voltage switching. AF 60W pre-driver applications. hFE Features High breakdown voltage.excellent linearity of hFE and small Cob,fast switching speed. /Absolu

 0.9. Size:285K  lzg
 3dg2999.pdf

2SC2999(3DG2999) NPN /SILICON NPN TRANSISTOR Purpose RF,HF Amplifier applications. f T Features High f small C . T re /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 25 V CBO V 20 V CEO V 3.0 V EBO I 30

 0.10. Size:319K  niko-sem
 pg2910bd.pdf

N-Channel Enhancement Mode PG2910BD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 100V 29.8m 27A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =

 0.11. Size:403K  niko-sem
 pg2910bea.pdf

PG2910BEA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 29m 17.5A D D D D D G. GATE D. DRAIN G S. SOURCE 100% UIS Tested S 100% Rg Tested #1 S S S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Sou

 0.12. Size:375K  niko-sem
 pg2910bk.pdf

N-Channel Enhancement Mode PG2910BK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free D D D D D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 100V 29.8m 27A G. GATE D. DRAIN S. SOURCE #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source V