G37 Todos los transistores

GOFORD G37 DESCRIPTION D The G37 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID (Typ) @-2.5V @-4.5V (Typ) G37 -20V 37m 55m -4.1 A High P

50A, 30V N-CHANNELMOSFET KNX3703A KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Features R (typ.)=7.5m ,VGS=10V DS(on) Advanced trenchprocess technology High density cell design for ultra lowon-resistance Fully characterized avalanche voltage and current 2.Applications High Frequency Point-of-LoadSynchronous Buck Converter for MB/NB/UMPC/VGA NetworkingDC-DCP

GOFORD G3710 Description Features VDSS RDS(ON) ID @ 10V (typ) 21m 59 A 100V Fast switching 100% avalanche tested Improved dv/dt capability Application UPS Inverter Electric tools High efficiency switch mode power supplies Absolute Maximum Ratings TC=25 unless otherwise specified Max. Symbol Parameter Units TO-220 V Dra

2SC3779(3DG3779) NPN /SILICON NPN TRANSISTOR Applications UHF low-noise amplifiers, wide-band amplifiers. Features Small noise figure, high power gain, high f . T /Absolute maximum ratings(Ta=25 ) Symbol Ra

50A, 30V N-CHANNELMOSFET KNX3703A KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Features R (typ.)=7.5m ,VGS=10V DS(on) Advanced trenchprocess technology High density cell design for ultra lowon-resistance Fully characterized avalanche voltage and current 2.Applications High Frequency Point-of-LoadSynchronous Buck Converter for MB/NB/UMPC/VGA NetworkingDC-DCP