G66 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GOFORDG66DDescription The G66 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDSS RDS(ON) RDS(ON) ID(Typ) @-2.5V @-4.5V (Typ)G66-16V33 m 45m -5.8AMarking an

DMG6602SVTQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Device V(BR)DSS RDS(on) Low Input Capacitance TA = +25C Fast Switching Speed 60m @ VGS = 10V 3.4A Low Input/Output Leakage Q1 30V 100m @ VGS = 4.5V 2.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antim

DMG6601LVTCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features ID max Complementary MOSFETDevice V(BR)DSS RDS(ON) max Package TA = +25C Low On-Resistance Low Input Capacitance 55m @ VGS = 10V TSOT26 3.8A Q1 30V Fast Switching Speed 65m @ VGS = 4.5V TSOT26 3.6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 110m @ VGS =

DMG6602SVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Device V(BR)DSS RDS(on) Low Input Capacitance TA = +25C Fast Switching Speed 60m @ VGS = 10V 3.4A Low Input/Output Leakage Q1 30V 100m @ VGS = 4.5V 2.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Anti

SSG6612N 9.4 A, 30 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar

SSG668011.5A, 30V,RDS(ON) 11m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductSOP-8Description0.190.250.400.90oThe SSG6680 provide the designer with the best combination of fast switching, 0.375 REF6.20ruggedized device design, low on-resistance and cost-effectiveness. 5.800.25The SOP-8 is universally preferred for al

GOFORDG66DDescription The G66 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDSS RDS(ON) RDS(ON) ID(Typ) @-2.5V @-4.5V (Typ)-16V33 m 45m -5.8A High Power

GOFORDG66DDescription The G66 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDSS RDS(ON) RDS(ON) ID(Typ) @-2.5V @-4.5V (Typ)-16V 32 m 45m -5.8A High Power

DMG6602Swww.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at V