G66 Todos los transistores

 ..1. Size:1422K  goford
 g66.pdf

GOFORD G66 D Description The G66 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDSS RDS(ON) RDS(ON) ID (Typ) @-2.5V @-4.5V (Typ) G66 -16V 33 m 45m -5.8 A Marking an

 0.1. Size:511K  diodes
 dmg6602svtq.pdf

DMG6602SVTQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Device V(BR)DSS RDS(on) Low Input Capacitance TA = +25 C Fast Switching Speed 60m @ VGS = 10V 3.4A Low Input/Output Leakage Q1 30V 100m @ VGS = 4.5V 2.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antim

 0.2. Size:382K  diodes
 dmg6601lvt.pdf

DMG6601LVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features ID max Complementary MOSFET Device V(BR)DSS RDS(ON) max Package TA = +25 C Low On-Resistance Low Input Capacitance 55m @ VGS = 10V TSOT26 3.8A Q1 30V Fast Switching Speed 65m @ VGS = 4.5V TSOT26 3.6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 110m @ VGS =

 0.3. Size:506K  diodes
 dmg6602svt.pdf

DMG6602SVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Device V(BR)DSS RDS(on) Low Input Capacitance TA = +25 C Fast Switching Speed 60m @ VGS = 10V 3.4A Low Input/Output Leakage Q1 30V 100m @ VGS = 4.5V 2.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Anti

 0.4. Size:567K  secos
 ssg6612n.pdf

SSG6612N 9.4 A, 30 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar

 0.5. Size:415K  secos
 ssg6680.pdf

SSG6680 11.5A, 30V,RDS(ON) 11m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.19 0.25 0.40 0.90 o The SSG6680 provide the designer with the best combination of fast switching, 0.375 REF 6.20 ruggedized device design, low on-resistance and cost-effectiveness. 5.80 0.25 The SOP-8 is universally preferred for al

 0.6. Size:1739K  goford
 g66-6l.pdf

GOFORD G66 D Description The G66 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDSS RDS(ON) RDS(ON) ID (Typ) @-2.5V @-4.5V (Typ) -16V 33 m 45m -5.8 A High Power

 0.7. Size:1729K  goford
 g66-3l.pdf

GOFORD G66 D Description The G66 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDSS RDS(ON) RDS(ON) ID (Typ) @-2.5V @-4.5V (Typ) -16V 32 m 45m -5.8 A High Power

 0.8. Size:1546K  cn vbsemi
 dmg6602s.pdf

DMG6602S www.VBsemi.tw N- and P-Channel 2 V (D-S) MOSFET 0 FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFET N-Channel 20 0.036 at VGS = 4.5 V 4.2 100 % Rg Tested 0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/EC P-Channel - 20 0.083 at V