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G16 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: G16
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 18 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: SOT23
 

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G16 Datasheet (PDF)

 ..1. Size:1470K  goford
g16.pdf pdf_icon

G16

GOFORDG16Description DThe G16 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SGeneral Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @2.5V (Typ)18V15m 22m 5.5AG16

 0.1. Size:1093K  1
g16p03.pdf pdf_icon

G16

GOFORDG16P03G16P03G16P03DescriptionThe G16P03 uses advanced trench technology to provideexcellent R , low gate charge . This device is suitable forDS(ON)use as a load switch or in PWM applications.General FeaturesRDS(ON) RDS(ON) VDSS ID @-10V (typ) @-4.5V (typ) Schematic diagram-30V 10.6 16.3 m -16A m High Power and current handing capability Le

 0.2. Size:751K  1
g16p03d3.pdf pdf_icon

G16

GOFORD G16P03D3P-Channel Trench MOSFETDescriptionThe G16P03D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General Features VDS -30V Schematic diagram ID (at VGS = -10V) -16A RDS(ON) (at VGS = -10V)

 0.3. Size:53K  philips
bfg16a.pdf pdf_icon

G16

DISCRETE SEMICONDUCTORSDATA SHEETBFG16ANPN 2 GHz wideband transistor1995 Sep 12Product specificationSupersedes data of November 1992File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 2 GHz wideband transistor BFG16AFEATURES PINNINGfpage4 High power gainPIN DESCRIPTION Good thermal stability1 emitter Gold metallizat

Otros transistores... G68 , G69 , G80N06 , G96 , GD1 , G22 , G23 , G11 , IRFP250N , G17 , 03N06 , 05N06 , 100N03 , 100P03 , 10N03 , 110N10 , 11N10C .

History: NTD5804N | STU417S | IRLI2910 | FRK460H

 

 
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