G16 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: G16
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 18 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 300 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Encapsulados: SOT23
Búsqueda de reemplazo de G16 MOSFET
- Selecciónⓘ de transistores por parámetros
G16 datasheet
g16.pdf
GOFORD G16 Description D The G16 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @2.5V (Typ) 18V 15m 22m 5.5 A G16
g16p03.pdf
GOFORD G16P03 G16P03 G16P03 Description The G16P03 uses advanced trench technology to provide excellent R , low gate charge . This device is suitable for DS(ON) use as a load switch or in PWM applications. General Features RDS(ON) RDS(ON) VDSS ID @-10V (typ) @-4.5V (typ) Schematic diagram -30V 10.6 16.3 m -16A m High Power and current handing capability Le
g16p03d3.pdf
GOFORD G16P03D3 P-Channel Trench MOSFET Description The G16P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features VDS -30V Schematic diagram ID (at VGS = -10V) -16A RDS(ON) (at VGS = -10V)
bfg16a.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BFG16A NPN 2 GHz wideband transistor 1995 Sep 12 Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFG16A FEATURES PINNING fpage 4 High power gain PIN DESCRIPTION Good thermal stability 1 emitter Gold metallizat
rej03g1679 hat2201wpds.pdf
Preliminary Datasheet HAT2201WP REJ03G1679-0310 Silicon N Channel Power MOS FET Rev.3.10 Power Switching May 21, 2010 Features Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 34 m typ. (at VGS = 10 V) Outline RENESAS Package code PWSN0008DA-A (Package name WPAK) 5 6 7 8 D D D D 8 6 7 5 4 1, 2, 3
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rej03g1612 rjk1536dpeds.pdf
Preliminary Datasheet RJK1536DPE REJ03G1612-0300 N-Channel Power MOSFET Rev.3.00 High-Speed Switching Use Jun 30, 2010 Features VDSS 150 V RDS(on) 30 m (Max) ID 50 A Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) 2, 4 D 4 1. Gate 2. Drain 3. Source 1 G 4. Drain 1 2 3 S 3 Application Motor control, Lighting
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rej03g1661 rjk0354dspds.pdf
Preliminary Datasheet RJK0354DSP REJ03G1661-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 05, 2010 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.4 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PRSP0008DD-D (Package name SOP-8) 5 6 7 8 D
rej03g1643 rjk0348dpads.pdf
Preliminary Datasheet RJK0348DPA REJ03G1643-0310 Silicon N Channel Power MOS FET Rev.3.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.9 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PWSN0008DC-A (Package name W
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rej03g1646 rjk0351dpads.pdf
Preliminary Datasheet RJK0351DPA REJ03G1646-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.2 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PWSN0008DC-A (Package name W
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rej03g1645 rjk0349dpads.pdf
Preliminary Datasheet RJK0349DPA REJ03G1645-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.4 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PWSN0008DC-A (Package name W
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rej03g1658 rjk0368dpads.pdf
Preliminary Datasheet RJK0368DPA REJ03G1658-0410 Silicon N Channel Power MOS FET Rev.4.10 Power Switching May 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 11 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PWSN0008DC-A (Package name WP
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rej03g1642 rjk0346dpads.pdf
Preliminary Datasheet RJK0346DPA REJ03G1642-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PWSN0008DC-A (Package name W
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rej03g1651 rjk0358dpads.pdf
Preliminary Datasheet RJK0358DPA REJ03G1651-0410 Silicon N Channel Power MOS FET Rev.4.10 Power Switching May 21, 2010 Features High speed switching Capable of 5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.6 m typ. (at VGS = 10 V) Outline RENESAS Package code PWSN0008DC-A (Package name WPAK(2)) 5 6 7 8
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rej03g1678 hat2200wpds.pdf
Preliminary Datasheet HAT2200WP REJ03G1678-0310 Silicon N Channel Power MOS FET Rev.3.10 Power Switching May 13, 2010 Features Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 22 m typ. (at VGS = 10 V) Outline RENESAS Package code PWSN0008DA-A (Package name WPAK) 5 6 7 8 D D D D 8 6 7 5 4 1, 2, 3
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rej03g1647 rjk0353dpads.pdf
Preliminary Datasheet RJK0353DPA REJ03G1647-0310 Silicon N Channel Power MOS FET Rev.3.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.0 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PWSN0008DC-A (Package name W
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rej03g1649 rjk0355dpads.pdf
Preliminary Datasheet RJK0355DPA REJ03G1649-0510 Silicon N Channel Power MOS FET Rev.5.10 Power Switching May 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.2 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PWSN0008DC-A (Package name W
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sihg16n50c.pdf
SiHG16N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) ( )VGS = 10 V 0.38 100 % Avalanche Tested Qg (Max.) (nC) 68 Gate Charge Improved Qgs (nC) 17.6 Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single Compliant to RoHS Directive 2002/95/EC D TO-247AC G S D G S N-Channel MOSFET
ipg16n10s4l-61a.pdf
IPG16N10S4L-61A OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS(on),max3) 61 mW ID 16 A Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Type
ipg16n10s4-61a.pdf
IPG16N10S4-61A OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS(on),max3) 61 m ID 16 A Features Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Typ
mcg16n15.pdf
MCG16N15 Features Split Gate Trench MOSFET Technology Low Thermal Resistance Halogen Free. Green Device (Note 1) Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) MOSFET Maximum Ratings Operating Junction Temperature Range -55 C to +150 C Storage Te
nvbg160n120sc1.pdf
MOSFET SiC Power, Single N-Channel, D2PAK-7L 1200 V, 160 mW, 19.5 A NVBG160N120SC1 www.onsemi.com Features Typ. RDS(on) = 160 mW Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC) V(BR)DSS RDS(ON) MAX ID MAX Low Effective Output Capacitance (typ. Coss = 50.7 pF) 1200 V 224 mW @ 20 V 19.5 A 100% Avalanche Tested Qualified According to AEC-Q101 Drain (TAB)
ntbg160n120sc1.pdf
MOSFET SiC Power, Single N-Channel, D2PAK-7L 1200 V, 160 mW, 19.5 A NTBG160N120SC1 www.onsemi.com Features Typ. RDS(on) = 160 mW Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC) V(BR)DSS RDS(ON) MAX ID MAX Low Effective Output Capacitance (typ. Coss = 50.7 pF) 1200 V 224 mW @ 20 V 19.5 A 100% Avalanche Tested TJ = 175 C Drain (TAB) This Device is Pb-Fr
g16p03.pdf
GOFORD G16P03 Description The G16P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram RDS(ON) VDSS ID @-10V (typ) -30V -16A 10 m High Power and current handing capability Le
g1601.pdf
GOFORD G1601 DESCRIPTION D The G1601 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID (Typ) @ (Typ) @-2.5V -4.5V -20V 55m 70m -2.6 A G1601
g16p03s.pdf
GOFORD G16P03S P-Channel Trench MOSFET Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS -30V ID (at VGS = -10V) -16A RDS(ON) (at VGS = -10V)
br3dg1684.pdf
2SC1684(BR3DG1684) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features , High hFE, low VCE(sat). / Applications General purpose amplifier. / Equivalent Circuit
4scg160.pdf
4SCG160 PNP A B C PCM Ta=25 300 4 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 120 160 200 V V(BR)CEO ICE=0.1mA 100 140 180 V V(BR) EBO IEB=0.1mA 6.0 V ICBO VCB=50V 0.1 A ICEO VCE=50V 1.0 A IEBO VEB=2V 1.
3dg162.pdf
3DG162 NPN A B C D E F G H I J PCM 300 mW IC 20 mA Tjm 175 V(BR)CB ICB=0.1mA 6 10 14 18 22 6 10 14 18 22 V 0 0 0 0 0 0 0 0 0 0 V(BR)CE ICE=0.1mA 6 10 14 18 22 6 10 14 18 22 V O 0 0 0 0 0 V(BR)EB 5.0 0 0 0 0 0 V
3dg161.pdf
3DG161(A G) NPN A B C D E F G PCM TA=25 300 mW ICM 20 mA Tjm 175 Tstg -55 150 V(BR)CEO ICE=0.5mA 60 100 140 180 220 260 300 V 0 V(BR)EBO IEB=0.1mA 5.0 V ICBO VCE=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VCE=1.5V 0.1 A VBEsat IC=10mA 3
3dg1675.pdf
2SC1675(3DG1675) NPN /SILICON NPN TRANSISTOR , / , / Purpose AM converter ,AM/FM IF amplifier and local oscillator of AM/FM tuner. , Features Small output capacitance, low noise figure. /Absolute maximum ratings
3dg1623.pdf
2SC1623(3DG1623) NPN /SILICON NPN TRANSISTOR /Purpose Audio frequency general amplifier application. h , V 2SA812(3CG812) /Features High h and V , complementary pair FE CEO, FE CEO with 2SA812(3CG812). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V
3dg1627af.pdf
2SC1627AF(3DG1627AF) NPN /SILICON NPN TRANSISTOR Purpose Driver stage amplifier and voltage amplifier. 30 35W 2SA817AF(3CG817AF) Features Driver stage of 30 to 35 watts application, complementary pair with 2SA817AF(3CG817AF). /Absolute maximum ratings(
3cg1621.pdf
2SA1621(3CG1621) PNP /SILICON PNP TRANSISTOR . Purpose Audio power amplifier application . , 2SC4210(3DG4210) Features High hFE,complementary pair with 2SC4210(3DG4210). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -35 V CBO V -30 V C
psig160-12.pdf
ECO-PACTM 2 IGBT Module PSIG 160/12 IC25 = 169 A PSIS 160/12* VCES = 1200 V PSSI 160/12* VCE(sat)typ.= 2.9 V Short Circuit SOA Capability Square RBSOA Preliminary Data Sheet X15 AC 1 IK 10 NTC L9 LMN S A IJK T16 X15 X16 L9 NTC F1 IK 10 AC 1 X16 PSIG 160/12 PSIS 160/12* PSSI 160/12* IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25 C to 150 C 1200 V *NTC optional
3cg160.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG160,3CG170 PNP Silicon High Frequency Middle Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power
3dg160.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG160 NPN Silicon High Reverse Voltage High Frequency Low Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification
ttg160n03gt.pdf
TTG160N03GT Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information
ttg160n03at.pdf
TTG160N03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 30V Low RDS(ON) ID (at VGS =10V) 160A Low Gate Charge RDS(ON) (at VGS =10V)
mpg160n04p.pdf
Silicon N-Channel Power MOSFET Description The MPG160N04 uses advanced technology and design to provide excellent RDS(ON) . It can be used in a wide variety of applications. General Features VDS=40V, Rdson
msg160t65hlc1.pdf
MSG160T65HLC1 Features Very Low Saturation Voltage VCE(sat) = 2.1V @ IC = 160 A Maximum Junction Temperature TJ = 175 C Positive Temperature Co-Efficient Tight Parameter Distribution High Input Impedance Applications Traction Inverter for HEV/EV Auxiliary DC/AC Converter Motor Drives Other Power-Train Applications Requiring High Power Switch
Otros transistores... G68 , G69 , G80N06 , G96 , GD1 , G22 , G23 , G11 , IRFB4115 , G17 , 03N06 , 05N06 , 100N03 , 100P03 , 10N03 , 110N10 , 11N10C .
History: IRFI4410ZG | IRFI4321 | IRFP4242 | IRFP4368 | IRFL024Z
History: IRFI4410ZG | IRFI4321 | IRFP4242 | IRFP4368 | IRFL024Z
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