G17 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: G17
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 15 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua
de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 45 nS
Cossⓘ - Capacitancia de salida: 390 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
Encapsulados: SOT23-3L
Búsqueda de reemplazo de G17 MOSFET
- Selecciónⓘ de transistores por parámetros
G17 datasheet
..1. Size:1663K goford
g17.pdf 
GOFORD G17 Description D The G17 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDSS RDS(ON) ID @ (typ) -4.5V -18V 20m - 7A G17 High power and current handing capability
0.1. Size:60K philips
bfg17.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BFG17A NPN 3 GHz wideband transistor 1995 Sep 12 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFG17A DESCRIPTION PINNING NPN wideband transistor in a PIN DESCRIPTION microminiature plastic SOT143 handbook, 2 columns 43 Code E6 surface mounting envelop
0.2. Size:127K renesas
rej03g1721 rjk0351dspds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.3. Size:115K renesas
rej03g1783 rjk1555dpads.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.4. Size:115K renesas
rej03g1761 rjk2057dpads.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.5. Size:133K renesas
rej03g1736 h7n1005dldsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.6. Size:115K renesas
rej03g1776 rjk2555dpads.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.7. Size:92K renesas
rej03g1786 rjk0395dpads.pdf
Preliminary Datasheet RJK0395DPA REJ03G1786-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-
0.8. Size:129K renesas
rej03g1780 rqj0306fqdqsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.9. Size:92K renesas
rej03g1789 rjk03b7dpads.pdf
Preliminary Datasheet RJK03B7DPA REJ03G1789-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.0 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A
0.10. Size:163K renesas
rej03g1722 rjk0389dpads.pdf
Preliminary Datasheet RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1722-0410 High Speed Power Switching Rev.4.10 May 13, 2010 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code PWSN0008DD-A (Package name WPAK-D2) 2 3 4 9 D1 D1 D1 S1/D2
0.11. Size:92K renesas
rej03g1753 rjk5015dpmds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.12. Size:126K renesas
rej03g1779 rqj0305eqdqsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.13. Size:92K renesas
rej03g1787 rjk0396dpads.pdf
Preliminary Datasheet RJK0396DPA REJ03G1787-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-
0.14. Size:128K renesas
rej03g1778 rqj0304dqdqsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.15. Size:92K renesas
rej03g1790 rjk03b8dpads.pdf
Preliminary Datasheet RJK03B8DPA REJ03G1790-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A
0.16. Size:117K renesas
rej03g1735 rjk2055dpads.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.17. Size:120K renesas
rej03g1708 rjk1008dppds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.18. Size:118K renesas
rej03g1759 rjk1557dpads.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.19. Size:92K renesas
rej03g1788 rjk0397dpads.pdf
Preliminary Datasheet RJK0397DPA REJ03G1788-0230 Silicon N Channel Power MOS FET Rev.2.30 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-
0.20. Size:115K renesas
rej03g1777 rjk2557dpads.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.21. Size:117K renesas
rej03g1744 hat2185wpds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.22. Size:92K renesas
rej03g1785 rjk0394dpads.pdf
Preliminary Datasheet RJK0394DPA REJ03G1785-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.1 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-
0.23. Size:91K renesas
rej03g1752 rjk6015dpmds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.24. Size:93K renesas
rej03g1791 rjk03b9dpads.pdf
Preliminary Datasheet RJK03B9DPA REJ03G1791-0320 Silicon N Channel Power MOS FET Rev.3.20 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-
0.25. Size:179K renesas
rej03g1750 rjl6012dpeds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.26. Size:93K renesas
rej03g1784 rjk0393dpads.pdf
Preliminary Datasheet RJK0393DPA REJ03G1784-0220 Silicon N Channel Power MOS FET Rev.2.20 Power Switching May 21, 2010 Features High speed switching Capable of 4.5V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A
0.27. Size:187K vishay
sihg17n60d.pdf
SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 650 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.340 - Low Input Capacitance (Ciss) Qg (Max.) (nC) 90 - Reduced Capacitive Switching Losses Qgs (nC) 14 - High Body Diode Ruggedness Qgd (nC) 22 - Avalanche Energy Rated (UIS
0.28. Size:123K vishay
sihg17n80e.pdf
SiHG17N80E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Low figure-of-merit (FOM) Ron x Qg TO-247AC Low input capacitance (Ciss) Reduced switching and conduction losses G Ultra low gate charge (Qg) Avalanche energy rated (UIS) S Material categorization for definitions of compliance D S please see www.vishay.com/doc?99912 G N-Chann
0.29. Size:121K china
3cg17b.pdf
3CG17B PNP PCM TA=25 150 mW ICM 20 mA Tjm 175 Tstg -55 150 V(BR)CEO ICE=0.1mA 12 V V(BR)EBO IEB=0.1mA 4.0 V ICEO VCE=6V 0.2 A IC=10mA VCEsat 0.5 V IB=1mA VCE=6V hFE 30 IC=2mA VCE=5V fT IC=5mA 100 MHz fo=3
0.30. Size:98K china
3cg170.pdf
LJ2015-37 3CG170 PNP A B C D E P Ta=25 500 mW CM I 50 mA CM T 175 jm T -55 150 stg V I =0.1mA 80 120 160 200 240 V (BR)CBO CB V I =0.1mA 60 100 140 180 200 V (BR)CEO CE V I =0.1mA 4.0 V (BR)EBO EB I V =3
0.31. Size:362K foshan
3dg1741am.pdf
2SC1741AM(3DG1741AM) NPN /SILICON NPN TRANSISTOR Purpose Medium power transistor . ,VCE(sat) Features High I , Low V . C CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 50 V CBO V 50 V CEO V 5.0 V EBO I 0.5 A
0.32. Size:319K foshan
3dg1740m.pdf
2SC1740M(3DG1740M) NPN /SILICON NPN TRANSISTOR Purpose General purpose amplifier. , 2SA933M(3CG933M) Features Small base output capacitance, complementary pair with 2SA933M(3CG933M). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 60 V
0.33. Size:1421K littelfuse
mg17450wb-bn4mm.pdf
Power Module 1700V 450A IGBT Module RoHS MG17450WB-BN4MM Features IGBT3 CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology) technology) Free wheeling diodes Low turn-off losses, short with fast and soft reverse tail current recovery VCE(sat) with positive temperature coefficient Applications AC motor control Inverter and power suppli
0.35. Size:1390K littelfuse
mg17300d-bn4mm.pdf
Power Module 1700V 300A IGBT Module RoHS MG17300D-BN4MM Features IGBT3 CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology) technology) Free wheeling diodes Low turn-off losses, short with fast and soft reverse tail current recovery VCE(sat) with positive temperature coefficient Applications High frequency switching Motion/servo con
0.36. Size:1368K littelfuse
mg1750s-bn4mm.pdf
Power Module 1700V 50A IGBT Module RoHS MG1750S-BN4MM Features IGBT3 CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology) technology) Free wheeling diodes Low turn-off losses, short with fast and soft reverse tail current recovery VCE(sat) with positive temperature coefficient Applications Agency Approvals High frequency switching
0.37. Size:1385K littelfuse
mg17100d-bn4mm.pdf
Power Module 1700V 100A IGBT Module RoHS MG17100D-BN4MM Features IGBT3 CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology) technology) Free wheeling diodes Low turn-off losses, short with fast and soft reverse tail current recovery VCE(sat) with positive temperature coefficient Applications High frequency switching Motion/servo con
0.38. Size:1417K littelfuse
mg17225wb-bn4mm.pdf
Power Module 1700V 225A IGBT Module RoHS MG17225WB-BN4MM Features IGBT3 CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology) technology) Free wheeling diodes Low turn-off losses, short with fast and soft reverse tail current recovery VCE(sat) with positive temperature coefficient Applications AC motor control Inverter and power suppli
0.39. Size:1412K littelfuse
mg1775s-bn4mm.pdf
Power Module 1700V 75A IGBT Module RoHS MG1775S-BN4MM Features IGBT3 CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology) technology) Free wheeling diodes Low turn-off losses, short with fast and soft reverse tail current recovery VCE(sat) with positive temperature coefficient Applications Agency Approvals High frequency switching
0.40. Size:1431K littelfuse
mg17150d-bn4mm.pdf
Power Module 1700V 150A IGBT Module RoHS MG17150D-BN4MM Features IGBT3 CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology) technology) Free wheeling diodes Low turn-off losses, short with fast and soft reverse tail current recovery VCE(sat) with positive temperature coefficient Applications High frequency switching Motion/servo con
0.41. Size:1376K littelfuse
mg17200d-bn4mm.pdf
Power Module 1700V 200A IGBT Module RoHS MG17200D-BN4MM Features IGBT3 CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology) technology) Free wheeling diodes Low turn-off losses, short with fast and soft reverse tail current recovery VCE(sat) with positive temperature coefficient Applications High frequency switching Motion/servo con
0.42. Size:1418K littelfuse
mg17300wb-bn4mm.pdf
Power Module 1700V 300A IGBT Module RoHS MG17300WB-BN4MM Features IGBT3 CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology) technology) Free wheeling diodes Low turn-off losses, short with fast and soft reverse tail current recovery VCE(sat) with positive temperature coefficient Applications AC motor control Inverter and power suppli
0.43. Size:284K lzg
3cg1797.pdf
2SA1797(3CG1797) PNP /SILICON PNP TRANSISTOR , , 2SC4672(3DG4672) Features Low saturation voltage, excellent DC current gain characteristics, complements the 2SC4672(3DG4672). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -50 V CBO V -50 V
0.44. Size:286K lzg
3dg1741s.pdf
2SC1741S(3DG1741S) NPN /SILICON NPN TRANSISTOR Purpose Medium power transistor. , Features High I , Low V . C CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 40 V CBO V 32 V CEO V 5.0 V EBO I 500 mA C P 200 mW C T
0.45. Size:310K lzg
3dg1740s.pdf
2SC1740S(3DG1740S) NPN /SILICON NPN TRANSISTOR Purpose General purpose amplifier. , 2SA933AS(3CG933AS) Features Small base output capacitance, complementary pair with 2SA933AS(3CG933AS). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 60
0.46. Size:261K lzg
3cg1700.pdf
2SA1700(3CG1700) PNP /SILICON PNP TRANSISTOR Purpose High voltage driver applications. MBIT Features High breakdown voltage, adoption of MBIT process excellent hFE linearity. /Absolute maximum ratings(Ta=25 )
0.49. Size:310K dacosemi
dazf100g170xca.pdf
DAZF100G170XCA DACO SEMICONDUCTOR CO., LTD. IGBT Module 1700V / 100A Preliminary SOT-227 Features E G Fast Switching Trench / Field Stop IGBT Technology Low Switching Losses High Short Circuit Capability C Applications G = Gate, C = Collector, E = Emitter Welder / Power Supply Dimensions in inches and (millimeters) UPS / Inverter Industrial Mo
0.51. Size:1516K jiejie micro
jmtg170c04d.pdf
40V, 16A, 18.5m &37.3m N And P-channel Power Trench MOSFET JMTG170C04D Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters N P Unit 100% UIS TESTED VDSS 40 -40 V 100% Vds TESTED VGS(th)_Typ 1.9 -1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 16 -16 A Pb-free plating RDS(ON)_Typ(@VGS=10V 14.4 31.1 mW RDS(ON)_Typ(@VGS=4.5V 18.5 37
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History: IRFP3415
| IRFP3206
