IRF513 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF513
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 20
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 60
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 3.5
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25(max)
nS
Cossⓘ - Capacitancia
de salida: 100(max)
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8
Ohm
Paquete / Cubierta:
TO220AB
Búsqueda de reemplazo de IRF513 MOSFET
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IRF513 PDF Specs
9.1. Size:239K international rectifier
irf510pbf.pdf 
PD - 95364 IRF510PbF Lead-Free 6/10/04 Document Number 91015 www.vishay.com 1 IRF510PbF Document Number 91015 www.vishay.com 2 IRF510PbF Document Number 91015 www.vishay.com 3 IRF510PbF Document Number 91015 www.vishay.com 4 IRF510PbF Document Number 91015 www.vishay.com 5 IRF510PbF Document Number 91015 www.vishay.com 6 IRF510PbF TO-220AB Package Outline ... See More ⇒
9.3. Size:325K international rectifier
irf510s.pdf
PD - 95540 IRF510SPbF Lead-Free SMD-220 7/21/04 Document Number 91016 www.vishay.com 1 IRF510SPbF Document Number 91016 www.vishay.com 2 IRF510SPbF Document Number 91016 www.vishay.com 3 IRF510SPbF Document Number 91016 www.vishay.com 4 IRF510SPbF Document Number 91016 www.vishay.com 5 IRF510SPbF Document Number 91016 www.vishay.com 6 IRF510SPbF Peak Diode... See More ⇒
9.4. Size:252K fairchild semi
irf510a.pdf
IRF510A Advanced Power MOSFET FEATURES BVDSS = 100 V n Avalanche Rugged Technology RDS(on) = 0.4 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 5.6 A n Improved Gate Charge n Extended Safe Operating Area TO-220 n 175 C Operating Temperature n Lower Leakage Current 10 A (Max.) @ VDS = 100V n Lower RDS(ON) 0.289 (Typ.) 1 2 3 1.Gate 2. Drain 3. Sour... See More ⇒
9.6. Size:937K samsung
irf510a.pdf
Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.6 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.289 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximu... See More ⇒
9.7. Size:201K vishay
irf510pbf sihf510.pdf
IRF510, SiHF510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.54 RoHS* 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 8.3 Fast Switching Qgs (nC) 2.3 Ease of Paralleling Qgd (nC) 3.8 Simple Drive Requirements Configuration Single Compli... See More ⇒
9.8. Size:196K vishay
irf510strlpbf irf510strrpbf sihf510s.pdf
IRF510S, SiHF510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 10 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 8.3 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.3 175 C Operating Temperature Qgd (nC) 3.8 Fast Switching Ea... See More ⇒
9.9. Size:210K vishay
irf510s sihf510s.pdf
IRF510S, SiHF510S www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Surface-mount Available in tape and reel D2PAK (TO-263) Dynamic dv/dt rating Available Repetitive avalanche rated G 175 C operating temperature Available Fast switching Ease of paralleling D G Material categorization for definitions of compliance S S please see www.... See More ⇒
9.10. Size:279K vishay
irf510 sihf510.pdf
IRF510, SiHF510 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating VDS (V) 100 Available Repetitive avalanche rated RDS(on) ( )VGS = 10 V 0.54 175 C operating temperature Available Qg max. (nC) 8.3 Fast switching Qgs (nC) 2.3 Ease of paralleling Qgd (nC) 3.8 Simple drive requirements Configuration Single ... See More ⇒
9.11. Size:151K infineon
irf510 sihf510.pdf
IRF510, SiHF510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.54 RoHS* 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 8.3 Fast Switching Qgs (nC) 2.3 Ease of Paralleling Qgd (nC) 3.8 Simple Drive Requirements Configuration Single Compli... See More ⇒
Otros transistores... IRF4905
, IRF4905L
, IRF4905S
, IRF510
, IRF510A
, IRF510S
, IRF511
, IRF512
, AO4407A
, IRF520
, IRF520A
, IRF520FI
, IRF520N
, IRF520NS
, IRF521
, IRF5210
, IRF5210L
.
