60N04 Todos los transistores

 ..1. Size:1777K  goford
 60n04 to252 to251.pdf

GOFORD 60N04 Description The 60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) ID Schematic diagram @ 10V (typ) m 60A 40V 7.3 High density cell design for ultra low Rdson Fully characterized avalanche voltage and current

 0.1. Size:274K  renesas
 np60n04kug.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.2. Size:365K  renesas
 np160n04tdg.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.3. Size:195K  renesas
 np160n04tuj.pdf

Preliminary Data Sheet NP160N04TUJ R07DS0021EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jul 01, 2010 Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 2.0 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) Designe

 0.4. Size:315K  renesas
 np60n04mug.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.5. Size:102K  renesas
 np60n04muk np60n04nuk.pdf

Preliminary Data Sheet NP60N04MUK, NP60N04NUK R07DS0597EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.3 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss Ciss = 2450 pF TYP. (VDS = 25 V) Des

 0.6. Size:105K  renesas
 np60n04vdk.pdf

Preliminary Data Sheet NP60N04VDK R07DS1014EJ0100 40 V 60 A N-channel Power MOS FET Rev.1.00 Application Automotive Feb 21, 2013 Description The NP60N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss Ciss = 2450 pF

 0.7. Size:356K  renesas
 np160n04tug.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.8. Size:104K  renesas
 np60n04pdk.pdf

Preliminary Data Sheet NP60N04PDK R07DS1013EJ0100 40 V 60 A N-channel Power MOS FET Rev.1.00 Application Automotive Feb 21, 2013 Description The NP60N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.95 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss Ciss = 2450 pF

 0.9. Size:228K  renesas
 np160n04tuk.pdf

Preliminary Data Sheet R07DS0543EJ0100 NP160N04TUK Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.5 m MAX. ( VGS = 10 V, ID = 80 A ) Low Ciss Ciss = 7200 pF TYP. ( VDS = 25 V ) Designed f

 0.10. Size:101K  renesas
 np60n04vuk.pdf

Preliminary Data Sheet NP60N04VUK R07DS0576EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Nov 24, 2011 Description The NP60N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss Ciss = 2450 pF TYP. (VDS = 25 V) Designed for aut

 0.11. Size:276K  renesas
 np60n04hlf np60n04ilf.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.12. Size:136K  vishay
 sum60n04-05lt.pdf

SUM60N04-05LT Vishay Siliconix N-Channel 40-V (D-S) MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS Plus V(BR)DSS (V) rDS(on) ( )ID (A) Available Temperature Sensing Diode 0.0045 at VGS = 10 V 60a 175 C Junction Temperature RoHS* 40 0.0065 at VGS = 4.5 V COMPLIANT 20a Low Thermal Resistance Package APPLICATIONS D2PAK-5L Ind

 0.13. Size:103K  vishay
 sum60n04-05t.pdf

SUM60N04-05T Vishay Siliconix N-Channel 40-V (D-S) MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS Plus V(BR)DSS (V) rDS(on) ( )ID (A) Available Temperature Sensing Diode 0.0054 at VGS = 10 V 40 60a RoHS* 175 C Junction Temperature COMPLIANT Low Thermal Resistance Package 2 D PAK-5 D T1 1 2 3 4 5 D1 D2 G T2 G D S T 1

 0.14. Size:167K  vishay
 sum60n04-12lt.pdf

SUM60N04-12LT Vishay Siliconix Temperature Sensing MOSFET, N-Channel 40-V (D-S) FEATURES PRODUCT SUMMARY Temperature-Sense Diodes for Thermal Shutdown V(BR)DSS (V) rDS(on) ( )ID (A) Available TrenchFET Power MOSFET 0.009 at VGS = 10 V 60a 40 RoHS* 175 C Maximum Junction Temperature 0.012 at VGS = 4.5 V 60 COMPLIANT ESD Protected 2000 V Notes

 0.15. Size:98K  vishay
 sum60n04-06t.pdf

SUM60N04-06T Vishay Siliconix N-Channel 40-V (D-S) MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS Plus V(BR)DSS (V) rDS(on) ( )ID (A) Available Temperature Sensing Diode 0.0055 at VGS = 10 V 40 60a RoHS* 175 C Junction Temperature COMPLIANT New Low Thermal Resistance Package APPLICATIONS D2PAK-5L Industrial D T1 1 2 3 4

 0.16. Size:122K  infineon
 ipb160n04s4-h1.pdf

IPB160N04S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.6 mW DS(on) I 160 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB160N04S4-H1 PG-TO263-7-3 4N04H1

 0.17. Size:162K  infineon
 ipb160n04s4-h1 ds 1 0.pdf

IPB160N04S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.6 m DS(on) I 160 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB160N04S4-H1 PG-TO263-7-3 4N04H1

 0.18. Size:428K  infineon
 ipd160n04l.pdf

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 0.19. Size:145K  infineon
 ipb160n04s2-03.pdf

IPB160N04S2-03 OptiMOS - T Power-Transistor Product Summary Features V 40 V DS N-channel - Enhancement mode R 2.9 m DS(on),max Automotive AEC Q101 qualified I 160 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green package (lead free) PG-TO263-7-3 Ultra low Rds(on) 100% Avalanche tested Type Package Ordering Code Marking IPB1

 0.20. Size:666K  infineon
 iauc60n04s6n044.pdf

IAUC60N04S6N044 OptiMOS - 6 Power-Transistor Product Summary VDS 40 V RDS(on),max 4.5 mW ID 60 A Features PG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche tested

 0.21. Size:192K  infineon
 ipb160n04s3-h2 ipb160n04s3-h2 ds 1 1.pdf

IPB160N04S3-H2 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 2.1 m DS(on) I 160 A D Features N-channel - Enhancement mode PG-TO263-7-3 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB160N04S3-H2 PG-T

 0.22. Size:152K  infineon
 ipb160n04s2l-03.pdf

IPB160N04S2L-03 OptiMOS - T Power-Transistor Product Summary Features V 40 V DS N-channel Logic Level - Enhancement mode R 2.7 m DS(on),max Automotive AEC Q101 qualified I 160 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green package (lead free) PG-TO263-7-3 Ultra low Rds(on) 100% Avalanche tested Type Package Ordering Code

 0.23. Size:665K  infineon
 iauc60n04s6l039.pdf

IAUC60N04S6L039 OptiMOS - 6 Power-Transistor Product Summary VDS 40 V RDS(on),max 4.0 mW ID 60 A Features PG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche tested

 0.24. Size:200K  infineon
 ipb160n04s4l-h1.pdf

Data Sheet IPB160N04S4L-H1 OptiMOSTM-T2 Power-Transistor Product Summary VDS 40 V RDS(on) 1.5 m ID 160 A Features N-channel Logic Level - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB160N04S4L-H1 PG-TO263-7-3 4N04LH1 Ma

 0.25. Size:204K  ixys
 ixta160n04t2 ixtp160n04t2.pdf

Preliminary Technical Information IXTA160N04T2 VDSS = 40V TrenchT2TM IXTP160N04T2 ID25 = 160A Power MOSFET RDS(on) 5m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C40 V S VDGR TJ = 25 C to 175 C, RGS = 1M 40 V (TAB) VGSM Transient 20 V TO-220 (IXTP) ID25 TC

 0.26. Size:1204K  mcc
 mcu60n04a.pdf

MCU60N04A Features Low RDSon Low Gate Charge Split Gate Trench Power MV MOSFET technology Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings DPAK

 0.27. Size:145K  secos
 ssd60n04-12d.pdf

SSD60N04-12D N-Ch Enhancement Mode Power MOSFET 53A, 40V, RDS(ON) 12m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench TO-252(D-Pack) process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC

 0.28. Size:305K  analog power
 am60n04-12d.pdf

Analog Power AM60N04-12D N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 12 @ VGS = 10V 53 Low thermal impedance 40 14 @ VGS = 4.5V 49 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 0.29. Size:281K  sisemi
 sif160n040.pdf

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF160N040 N- MOS / N-CHANNEL POWER MOSFET SIF160N04

 0.30. Size:1281K  goford
 g60n04 to220.pdf

GOFORD G60N04 Description The G60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ) 40V 12.5m 8.5 m 60 A High density cell design for ultra low Rdson Fully characterized aval

 0.31. Size:1322K  goford
 g60n04.pdf

GOFORD .G60N04 Description The G60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ) 45V 11 m 9.7 m 60 A High density cell design for ultra low Rdson Fully characterized aval

 0.32. Size:1315K  goford
 g60n04 to252.pdf

GOFORD G60N04 Description The G60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ) 40V 12.5m 8.5 m 60 A High density cell design for ultra low Rdson Fully characterized aval

 0.33. Size:1822K  blue-rocket-elect
 brcs060n04szc.pdf

BRCS060N04SZC Rev.C Jul.-2022 DATA SHEET / Descriptions PDFN5 6 N N-Channel MOSFET in a PDFN5 6 Plastic Package . / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal DS(ON) resistan

 0.34. Size:1746K  blue-rocket-elect
 brcs060n04ym.pdf

BRCS060N04YM Rev.D Mar.-2023 DATA SHEET / Descriptions PDFN5 6A N Dual N-CHANNEL MOSFET in a PDFN5 6A Plastic Package. / Features Dual N-Ch VDS(V)=40V ID=60.2A RDS(ON)

 0.35. Size:1727K  blue-rocket-elect
 brcs060n04dp.pdf

 0.36. Size:195K  crhj
 cs60n04 a4.pdf

Silicon N-Channel Trench MOSFET R CS60N04 A4 General Description VDSS 40 V ID 60 A CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is PD(TC=25 ) 52 W obtained by advanced trench Technology which reduce RDS(ON)Typ 8.5 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switchi

 0.37. Size:341K  first silicon
 ftk60n04d.pdf

SEMICONDUCTOR FTK60N04D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION The FTK60N04D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2 provide excellent RDS(ON) with low gate charge. B 5 60 0 2 C 5 20 0 2 It can be used in awide variety of applications. D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MAX I 2 30 0

 0.38. Size:1273K  cn wxdh
 dsp060n04la.pdf

DSP060N04LA 40V/4.0m /66A N-MOSFET Features Key Parameters AEC-Q101 qualified VDS 40V Low on resistance RDS(on)typ. 4.0m Low reverse transfer capacitances ID 66A 100% single pulse avalanche energy test VTH 1.7V 100% VDS test Ciss@10V 901pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 1nC Applications Motor Control and Drive Charge/Discharge

 0.39. Size:4818K  maple semi
 sld60n04tb.pdf

SLD60N04TB 40V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 66A, 40V, RDS(on),Typ = 5.3m TRENCH technology. This advanced technology has been es- Low gate charge (Qg,typ = 54nC) pecially tailored to minimize conduction loss, provide superior Fast switching switching performance, and withstand high energy pulse in t

 0.40. Size:4009K  maple semi
 slm160n04g.pdf

 0.41. Size:1142K  matsuki electric
 me60n04 me60n04-g.pdf

ME60N04/ME60N04-G N- Channel 40V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME60N04 is the N-Channel logic enhancement mode power RDS(ON) 12m @VGS=10V field effect transistors are produced using high cell density DMOS RDS(ON) 17m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

 0.42. Size:547K  samwin
 swha60n04v.pdf

SW60N04V N-channel Enhanced mode DFN5*6 MOSFET Features DFN5*6 BVDSS 40V High ruggedness Low RDS(ON) (Typ 2.9m )@VGS=4.5V ID 60A 1 8 (Typ 2.3m )@VGS=10V 2 7 RDS(ON) 2.9m @VGS=4.5V 6 3 Low Gate Charge (Typ 127nC) 5 4 Improved dv/dt Capability 2.3m @VGS=10V 100% Avalanche Tested Application DC-DC Converter, Inverter, D(5

 0.43. Size:605K  way-on
 wmo60n04t1.pdf

WMO60N04T1 40V N-Channel Enhancement Mode Power MOSFET Description WMO60N04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. S G Features TO-252 V = 40V, I = 60A DS D R

 0.44. Size:279K  wuxi china
 cs60n04a4.pdf

Silicon N-Channel Trench MOSFET R CS60N04 A4 General Description VDSS 40 V CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, RDS(ON)Typ 8.5 m is obtained by advanced trench Technology which reduce the ID 60 A conduction loss, improve switching performance and enhance PD(TC=25 ) 52 W the avalanche energy. The transistor can be used in various 1.5 V VGS

 0.45. Size:1507K  allpower
 ap60n04q.pdf

 0.46. Size:4689K  first semi
 fir60n04lg.pdf

FIR60N04LG N-Channel 100V(D-S) MOSFET PIN Connection TO-252 Description The FIR60N04LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features D VDS =40V,ID =60A RDS(ON)

 0.47. Size:480K  jiejie micro
 jmtq60n04b.pdf

JMTQ60N04B Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 40V, 40A Load Switch RDS(ON)

 0.48. Size:516K  jiejie micro
 jmtg60n04b.pdf

JMTG60N04B Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 40V, 50A Load Switch RDS(ON)

 0.49. Size:480K  jiejie micro
 jmti60n04a.pdf

JMTI60N04A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 40V, 60A Load Switch RDS(ON)

 0.50. Size:979K  jiejie micro
 jmtk60n04b.pdf

JMTK60N04B Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 40V, 60A Load Switch RDS(ON)

 0.51. Size:538K  jiejie micro
 jmtc60n04b.pdf

JMTC60N04B Description JMT N-channel Enhancement Mode Power MOSFET Features Application 40V,60A Load Switch R

 0.52. Size:620K  cn yangzhou yangjie elec
 yjd60n04a.pdf

RoHS COMPLIANT YJD60N04A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 40V DS I 60A D R ( at V =10V) 7.0 mohm DS(ON) GS R ( at V =4.5V) 9.5 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cel

 0.53. Size:590K  cn hmsemi
 hms60n04eq.pdf

HMS60N04EQ N-Channel Super Trench Power MOSFET Description The HMS60N04EQ uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous recti

 0.54. Size:634K  cn hmsemi
 hm60n04.pdf

HM60N04 N-Channel Enhancement Mode Power MOSFET Description The HM60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON)

 0.55. Size:646K  cn hmsemi
 hm60n04k.pdf

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON)

 0.56. Size:274K  cn minos
 mpg160n04p.pdf

Silicon N-Channel Power MOSFET Description The MPG160N04 uses advanced technology and design to provide excellent RDS(ON) . It can be used in a wide variety of applications. General Features VDS=40V, Rdson

 0.57. Size:1593K  cn apm
 ap60n04df.pdf

AP60N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP60N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =60 A DS D R

 0.58. Size:1553K  cn apm
 ap160n04p ap160n04t.pdf

AP160N04PIT 40V N-Channel Enhancement Mode MOSFET Description The AP160N04P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =160 A DS D R

 0.59. Size:897K  cn apm
 ap60n04d.pdf

AP60N04D 40V N-Channel Enhancement Mode MOSFET Description The AP60N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =60 A DS D R

 0.60. Size:1454K  cn apm
 ap60n04nf.pdf

AP60N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP60N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =60 A DS D R