60N04 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GOFORD60N04Description The 60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) IDSchematic diagram @10V (typ)m 60A40V 7.3 High density cell design for ultra low Rdson Fully characterized avalanche voltage and current

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Data Sheet NP160N04TUJ R07DS0021EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jul 01, 2010Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 2.0 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) Designe

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Data Sheet NP60N04MUK, NP60N04NUK R07DS0597EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jan 11, 2012Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.3 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) Des

Preliminary Data Sheet NP60N04VDK R07DS1014EJ010040 V 60 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 21, 2013Description The NP60N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2450 pF

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Data Sheet NP60N04PDK R07DS1013EJ010040 V 60 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 21, 2013Description The NP60N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.95 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2450 pF

Preliminary Data Sheet R07DS0543EJ0100NP160N04TUK Rev.1.00Sep 23, 2011MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.5 m MAX. ( VGS = 10 V, ID = 80 A ) Low Ciss: Ciss = 7200 pF TYP. ( VDS = 25 V ) Designed f

Preliminary Data Sheet NP60N04VUK R07DS0576EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Nov 24, 2011Description The NP60N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) Designed for aut

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

SUM60N04-05LTVishay SiliconixN-Channel 40-V (D-S) MOSFET with Sensing DiodeFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETS PlusV(BR)DSS (V) rDS(on) ()ID (A)AvailableTemperature Sensing Diode0.0045 at VGS = 10 V60a 175 C Junction Temperature RoHS*400.0065 at VGS = 4.5 VCOMPLIANT20a Low Thermal Resistance PackageAPPLICATIONSD2PAK-5L Ind

SUM60N04-05TVishay SiliconixN-Channel 40-V (D-S) MOSFET with Sensing DiodeFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETS Plus V(BR)DSS (V) rDS(on) ()ID (A)AvailableTemperature Sensing Diode0.0054 at VGS = 10 V4060aRoHS* 175 C Junction TemperatureCOMPLIANT Low Thermal Resistance Package2 D PAK-5 DT11 2 3 4 5 D1 D2GT2G D S T 1

SUM60N04-12LTVishay SiliconixTemperature Sensing MOSFET, N-Channel 40-V (D-S)FEATURESPRODUCT SUMMARY Temperature-Sense Diodes for Thermal ShutdownV(BR)DSS (V) rDS(on) ()ID (A)Available TrenchFET Power MOSFET0.009 at VGS = 10 V 60a40 RoHS* 175 C Maximum Junction Temperature0.012 at VGS = 4.5 V 60COMPLIANT ESD Protected: 2000 VNotes:

SUM60N04-06TVishay SiliconixN-Channel 40-V (D-S) MOSFET with Sensing DiodeFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETS PlusV(BR)DSS (V) rDS(on) ()ID (A)AvailableTemperature Sensing Diode0.0055 at VGS = 10 V4060aRoHS* 175 C Junction TemperatureCOMPLIANT New Low Thermal Resistance PackageAPPLICATIONSD2PAK-5L IndustrialDT11 2 3 4

IPB160N04S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.6mWDS(on)I 160 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB160N04S4-H1 PG-TO263-7-3 4N04H1

IPB160N04S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.6mDS(on)I 160 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB160N04S4-H1 PG-TO263-7-3 4N04H1

pe % # ! % (>.;?6?@%>EFeatures 4 D Q 2CD CG:D49:?8 ') - . 7@B -'*- 1 m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BCD1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CQ ( 492??6= =@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q F2=2?496 D6CD65Q *3 7B66 A=2D:?8 , @"- 4@>A=:2?DType #* ( & !Pa

IPB160N04S2-03OptiMOS - T Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel - Enhancement modeR 2.9mDS(on),max Automotive AEC Q101 qualifiedI 160 AD MSL1 up to 260C peak reflow 175C operating temperature Green package (lead free)PG-TO263-7-3 Ultra low Rds(on) 100% Avalanche testedType Package Ordering Code MarkingIPB1

IAUC60N04S6N044OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 4.5mWID 60 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

IPB160N04S3-H2OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 2.1mDS(on)I 160 ADFeatures N-channel - Enhancement modePG-TO263-7-3 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB160N04S3-H2 PG-T

IPB160N04S2L-03OptiMOS - T Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel Logic Level - Enhancement modeR 2.7mDS(on),max Automotive AEC Q101 qualifiedI 160 AD MSL1 up to 260C peak reflow 175C operating temperature Green package (lead free)PG-TO263-7-3 Ultra low Rds(on) 100% Avalanche testedType Package Ordering Code

IAUC60N04S6L039OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 4.0mWID 60 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

Data Sheet IPB160N04S4L-H1OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 1.5mID 160 AFeatures N-channel Logic Level - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB160N04S4L-H1 PG-TO263-7-3 4N04LH1Ma

Preliminary Technical InformationIXTA160N04T2 VDSS = 40VTrenchT2TMIXTP160N04T2 ID25 = 160APower MOSFET RDS(on) 5m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C40 VSVDGR TJ = 25C to 175C, RGS = 1M 40 V(TAB)VGSM Transient 20 VTO-220 (IXTP)ID25 TC

MCU60N04AFeatures Low RDSon Low Gate Charge Split Gate Trench Power MV MOSFET technology Epoxy Meets UL 94 V-0 Flammability RatingN-CHANNEL Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Maximum RatingsDPAK

SSD60N04-12D N-Ch Enhancement Mode Power MOSFET 53A, 40V, RDS(ON) 12m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench TO-252(D-Pack)process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC

Analog Power AM60N04-12DN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)12 @ VGS = 10V53 Low thermal impedance 4014 @ VGS = 4.5V49 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF160N040N- MOS / N-CHANNEL POWER MOSFET SIF160N04

GOFORDG60N04Description The G60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @10V (Typ)40V12.5m 8.5 m 60A High density cell design for ultra low Rdson Fully characterized aval

GOFORD.G60N04Description The G60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @10V (Typ)45V11 m 9.7 m 60A High density cell design for ultra low Rdson Fully characterized aval

GOFORDG60N04Description The G60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @10V (Typ)40V12.5m 8.5 m 60A High density cell design for ultra low Rdson Fully characterized aval

BRCS060N04SZC Rev.C Jul.-2022 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal DS(ON)resistan

BRCS060N04YM Rev.D Mar.-2023 DATA SHEET / Descriptions PDFN56A N Dual N-CHANNEL MOSFET in a PDFN56A Plastic Package. / Features Dual N-Ch VDS(V)=40V ID=60.2A RDS(ON)

BRCS060N04DP Rev.A Aug.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features VDS(V)=40V ID=70A RDS(ON)@10V

Silicon N-Channel Trench MOSFET R CS60N04 A4 General Description VDSS 40 V ID 60 A CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is PD(TC=25) 52 W obtained by advanced trench Technology which reduce RDS(ON)Typ 8.5 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switchi

SEMICONDUCTORFTK60N04DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION The FTK60N04D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2provide excellent RDS(ON) with low gate charge. B 5 60 0 2C 5 20 0 2It can be used in awide variety of applications. D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAX I 2 30 0

DSP060N04LA40V/4.0m/66A N-MOSFETFeatures Key Parameters AEC-Q101 qualified VDS 40V Low on resistance RDS(on)typ. 4.0m Low reverse transfer capacitances ID 66A 100% single pulse avalanche energy test VTH 1.7V 100% VDS test Ciss@10V 901pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 1nCApplications Motor Control and Drive Charge/Discharge

ME60N04/ME60N04-G N- Channel 40V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME60N04 is the N-Channel logic enhancement mode power RDS(ON)12m@VGS=10V field effect transistors are produced using high cell density DMOS RDS(ON)17m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

SW60N04V N-channel Enhanced mode DFN5*6 MOSFET Features DFN5*6 BVDSS : 40V High ruggedness Low RDS(ON) (Typ 2.9m)@VGS=4.5V ID : 60A 1 8 (Typ 2.3m)@VGS=10V 2 7 RDS(ON) : 2.9m@VGS=4.5V 6 3 Low Gate Charge (Typ 127nC) 5 4 Improved dv/dt Capability 2.3m@VGS=10V 100% Avalanche Tested Application:DC-DC Converter, Inverter, D(5

WMO60N04T1 40V N-Channel Enhancement Mode Power MOSFET DescriptionWMO60N04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = 40V, I = 60A DS DR

Silicon N-Channel Trench MOSFET R CS60N04 A4 General Description VDSS 40 V CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, RDS(ON)Typ 8.5 m is obtained by advanced trench Technology which reduce the ID 60 A conduction loss, improve switching performance and enhance PD(TC=25) 52 W the avalanche energy. The transistor can be used in various 1.5 V VGS

FIR60N04LGN-Channel 100V(D-S) MOSFETPIN Connection TO-252Description The FIR60N04LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features D VDS =40V,ID =60A RDS(ON)

RoHS COMPLIANT YJD60N04A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 40V DS I 60A D R ( at V =10V) 7.0 mohm DS(ON) GS R ( at V =4.5V) 9.5 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cel

HMS60N04EQ N-Channel Super Trench Power MOSFET Description The HMS60N04EQ uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous recti

HM60N04N-Channel Enhancement Mode Power MOSFET Description The HM60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON)

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON)