13N50F Todos los transistores

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13N50F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 13N50F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 48 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 13 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 100 nS

Conductancia de drenaje-sustrato (Cd): 200 pF

Resistencia drenaje-fuente RDS(on): 0.48 Ohm

Empaquetado / Estuche: TO220F

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13N50F Datasheet (PDF)

1.1. fdp13n50f fdpf13n50ft.pdf Size:625K _fairchild_semi

13N50F
13N50F

September 2007 UniFETTM FDP13N50F / FDPF13N50FT tm N-Channel MOSFET 500V, 12A, 0.54? Features Description RDS(on) = 0.42? ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 30nC) stripe, DMOS technology. Low Crss ( Typ. 14.5pF) This advanced technology has been es

1.2. mtn13n50fp.pdf Size:338K _cystek

13N50F
13N50F

Spec. No. : C405FP Issued Date : 2008.12.01 CYStech Electronics Corp. Revised Date : 2011.03.30 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS : 500V RDS(ON) : 0.48Ω typ. MTN13N50FP ID : 13A Description The MTN13N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low o

1.3. ssf13n50f.pdf Size:533K _silikron

13N50F
13N50F

 SSF13N50F Main Product Characteristics: VDSS 500V RDS(on) 0.41Ω(typ.) ID 13A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

1.4. cs13n50f a9d.pdf Size:486K _crhj

13N50F
13N50F

Silicon N-Channel Power MOSFET R ○ CS13N50F A9D VDSS 500 V General Description: ID 13 A CS13N50F A9D, the silicon N-channel Enhanced PD (TC=25℃) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.4 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.5. cs13n50f a9h.pdf Size:346K _crhj

13N50F
13N50F

Silicon N-Channel Power MOSFET R ○ CS13N50F A9H VDSS 500 V General Description: ID 13 A CS13N50F A9H, the silicon N-channel Enhanced PD (TC=25℃) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.34 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

1.6. cs13n50f a9r.pdf Size:268K _crhj

13N50F
13N50F

Silicon N-Channel Power MOSFET R ○ CS13N50F A9R General Description: VDSS 500 V CS13N50F A9R, the silicon N-channel Enhanced ID 13 A PD(TC=25℃) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.7. cm13n50f to220fh.pdf Size:147K _jdsemi

13N50F
13N50F

R CM13N50F 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆500V N-Channel VDMOS ◆使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 ◆符合 RoHS

Otros transistores... 640 , 18N20 , 18N20A , 2N25 , 3N25 , 740 , 840 , 16N50F , 2N7000 , 20N50 , 5N60F , 7N60F , 8N60A , 8N60AF , 10N60F , 12N60F , 7N65AF .

 


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