13N50F Todos los transistores

 0.1. Size:1016K  1
 jcs13n50ft.pdf

N N- CHANNEL MOSFET R JCS13N50FT MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson-max @Vgs=10V 0.46 Qg-typ 37 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATUR

 0.2. Size:625K  fairchild semi
 fdp13n50f fdpf13n50ft.pdf

September 2007 UniFETTM FDP13N50F / FDPF13N50FT tm N-Channel MOSFET 500V, 12A, 0.54 Features Description RDS(on) = 0.42 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 30nC) stripe, DMOS technology. Low Crss ( Typ. 14.5pF) This advanced technol

 0.3. Size:1655K  jilin sino
 jcs13n50bc jcs13n50sc jcs13n50cc jcs13n50fc.pdf

 0.4. Size:1016K  jilin sino
 jcs13n50ft.pdf

N N- CHANNEL MOSFET R JCS13N50FT MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson-max @Vgs=10V 0.46 Qg-typ 37 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATUR

 0.5. Size:338K  cystek
 mtn13n50fp.pdf

Spec. No. C405FP Issued Date 2008.12.01 CYStech Electronics Corp. Revised Date 2011.03.30 Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 500V RDS(ON) 0.48 typ. MTN13N50FP ID 13A Description The MTN13N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low o

 0.6. Size:533K  silikron
 ssf13n50f.pdf

SSF13N50F Main Product Characteristics VDSS 500V RDS(on) 0.41 (typ.) ID 13A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 0.7. Size:486K  crhj
 cs13n50f a9d.pdf

Silicon N-Channel Power MOSFET R CS13N50F A9D VDSS 500 V General Description ID 13 A CS13N50F A9D, the silicon N-channel Enhanced PD (TC=25 ) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.4 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 0.8. Size:268K  crhj
 cs13n50f a9r.pdf

Silicon N-Channel Power MOSFET R CS13N50F A9R General Description VDSS 500 V CS13N50F A9R, the silicon N-channel Enhanced ID 13 A PD(TC=25 ) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 0.9. Size:346K  crhj
 cs13n50f a9h.pdf

Silicon N-Channel Power MOSFET R CS13N50F A9H VDSS 500 V General Description ID 13 A CS13N50F A9H, the silicon N-channel Enhanced PD (TC=25 ) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.34 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

 0.10. Size:147K  jdsemi
 cm13n50f to220fh.pdf

 0.11. Size:447K  silan
 svf13n50t svf13n50f svf13n50pn.pdf

 0.12. Size:414K  silan
 svf13n50f svf13n50t svf13n50pn svf13n50s svf13n50str.pdf

 0.13. Size:1143K  slkor
 sl13n50fs.pdf

SL13N50FS N-Channel Power MOSFET Features 13.0A, 500V, R =0.40 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Schematic diagram Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction TO-220F Absolute Maximum Ratings(Tc=25 C unless otherw

 0.14. Size:226K  wuxi china
 cs13n50fa9h.pdf

Silicon N-Channel Power MOSFET R CS13N50F A9H VDSS 500 V General Description ID 13 A CS13N50F A9H, the silicon N-channel Enhanced PD (TC=25 ) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.34 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

 0.15. Size:268K  wuxi china
 cs13n50fa9r.pdf

Silicon N-Channel Power MOSFET R CS13N50F A9R General Description VDSS 500 V CS13N50F A9R, the silicon N-channel Enhanced ID 13 A PD(TC=25 ) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 0.16. Size:4923K  first semi
 fir13n50fg.pdf

FIR13N50FG CREAT BY ART Advanced N-Ch Power MOSFET-G PIN Connection TO-220F VDSS 500 V ID 13 A PD (TC=25 ) 150 W RDS(ON) 0.4 G D S Features Fast Switching g Schematic dia ram Low ON Resistance(Rdson 0.5 ) D Low Gate Charge (Typical Data 85nC) Low Reverse transfer capacitances(Typical 100pF) G 100% Single Pulse avalanche energy Test S Marking Di

 0.17. Size:349K  cn hmsemi
 hm13n50 hm13n50f.pdf

HM13N50 / HM13N50F HM13N50 / HM13N50F 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 13.0A, 500V, RDS(on) = 0.48 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 45nC) This advanced technology has been espe cially tailored to Fast witching s minimize o n-state r esistance, pr ovide superior

 0.18. Size:1527K  cn marching-power
 mpva13n50f.pdf

MPVA13N50F Power MOSFET MPSW60M041 FEATURES APPLICATIONS l BVDSS 500V, ID=13A l Switch Mode Power Supply (SMPS) l RDS(on) 0.45 (Max) @VGS=10V l Uninterruptible Power Supply (UPS) l Very Low FOM (RDS(on) *Qg) l Power Factor Correction (PFC) l Excellent stability and uniformity l AC to DC Converters D G S TO-220F Ordering Information Type NO. Marking Package Code MPVA13N5