5N60F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 5N60F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 45 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 35 nS
Cossⓘ - Capacitancia de salida: 60 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de 5N60F MOSFET
- Selecciónⓘ de transistores por parámetros
5N60F datasheet
..1. Size:2143K goford
5n60 5n60f.pdf 
GOFORD 5N60/5N60F 600V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe, DMOS 600V 2.5 4.5A technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellen
0.1. Size:528K 1
svf5n60t svf5n60f svf5n60d svf5n60mj.pdf
SVF5N60T/F/D/MJ_Datasheet 5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior
0.3. Size:82K rohm
rdx045n60fu6.pdf
RDX045N60 Transistors 10V Drive Nch MOS FET RDX045N60 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TO-220FM 10.0 3.2 4.5 2.8 Features 1) Low on-resistance. 1.2 2) Low input capacitance. 1.3 3) Excellent resistance to damage from static electricity. 0.8 (1)Gate 2.54 2.54 0.75 2.6 (2)Drain (1) (2) (3) Applications (3)Source Switching P
0.4. Size:243K onsemi
ngtb75n60fl2wg.pdf
NGTB75N60FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175 C 75 A, 600 V
0.5. Size:243K onsemi
ngtb75n60fl2.pdf
NGTB75N60FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175 C 75 A, 600 V
0.6. Size:161K onsemi
ngtb35n60fl2wg.pdf
NGTB35N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.ons
0.7. Size:1547K kec
kgf15n60fda.pdf
SEMICONDUCTOR KGF15N60FDA TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand Times 5us(@TC=100 ) Extremel
0.8. Size:93K kec
kf5n60p kf5n60f.pdf
KF5N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ switching mode power supplies. A 9.9
0.9. Size:393K kec
kf5n60fz.pdf
KF5N60P/F/PZ/FZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N60P, KF5N60PZ A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ + switching mode pow
0.10. Size:1619K kec
kgt15n60fda.pdf
SEMICONDUCTOR KGT15N60FDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness as well as short circuit ruggedness. It is designed for hard switching applications. FEATURES High speed switching High system efficiency Short Circuit Withstand Times 5us(@TC=100 ) Extremely enhanced avalanch
0.11. Size:2166K jilin sino
jcs15n60ch jcs15n60fh jcs15n60bh jcs15n60sh.pdf
N R N-CHANNEL MOSFET JCS15N60H Package MAIN CHARACTERISTICS ID 15 A VDSS 600 V 0.52 (MAX) Rdson-max Vgs=10V 0.45 (TYP) Qg 35.7 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based o
0.12. Size:897K jilin sino
jcs5n60v jcs5n60r jcs5n60c jcs5n60f.pdf
N R N-CHANNEL MOSFET JCS5N60C Package MAIN CHARACTERISTICS ID 4.0 A VDSS 600 V Rdson Vgs=10V 2.5 Qg 9nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES
0.13. Size:976K jilin sino
jcs5n60vb jcs5n60rb jcs5n60cb jcs5n60fb.pdf
N R N-CHANNEL MOSFET JCS5N60B Package MAIN CHARACTERISTICS ID 5.0 A VDSS 600 V 2.4 Rdson Vgs=10V Qg 13.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power su
0.14. Size:287K cystek
mtn5n60fp.pdf
Spec. No. C408FP-A Issued Date 2009.04.20 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.1 (typ.) MTN5N60FP ID 4.5A Description The MTN5N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low
0.16. Size:4070K first silicon
fir5n60fg.pdf
FIR5N60FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Switchng Regulator Application Features High Voltage BVDSS=600V(Min.) Low Crss Crss=9.8F(Typ.) Low gate charge Qg=12nC(Typ.) G D S Low RDS(on) RDS(on)=1.7 D G S Marking Diagram Y = Year A = Assembly Location YAWW WW = Work Week FIR5N60F FIR5N60F = Specific Device Code Absolute maxi
0.21. Size:408K semihow
hfp5n60f hfs5n60f.pdf
Oct 2016 HFP5N60F / HFS5N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 5A Excellent Switching Characteristics RDS(on), Typ 1.8 100% Avalanche Tested Qg, Typ 12.5 nC RoHS Compliant HFP5N60F HFS5N60F Symbol TO-220 TO-220F S S D D G G Absolute Maximum Ratings TC=25 unle
0.22. Size:291K semihow
hfu5n60f hfd5n60f.pdf
Oct 2016 HFU5N60F / HFD5N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 5A Excellent Switching Characteristics RDS(on), Typ 1.8 100% Avalanche Tested Qg, Typ 12.5 nC RoHS Compliant HFU5N60F HFD5N60F Symbol TO-251 TO-252 D S S D G G Absolute Maximum Ratings TC=25 unles
0.23. Size:618K taitron
msk7d5n60f msk7d5n60t.pdf
600V/7.5A N-Channel MOSFET MSK7D5N60T/F 600V/7.5A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for active power factor correction Suitable for switching mode power supplies TO-220 Features VDSS=600V, ID=7.5A; Low Drain-Source ON Resistance RDS(ON) =
0.24. Size:617K taitron
msk4d5n60f msk4d5n60t.pdf
600V/4.5A N-Channel MOSFET MSK4D5N60T/F 600V/4.5A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for switching mode power supplies TO-220 Features VDSS=600V, ID=4.5A; Low Drain-Source ON Resistance RDS(ON) =2.5 @ VGS=10V Qg(typ.)=17nC RoHS C
0.25. Size:874K trinnotech
tgpf15n60fdr.pdf
TGPF15N60FDR Field Stop Trench IGBT Features 600V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5 s 175 Operating Temperature RoHS Compliant JEDEC Qualification Applications Motor Drive, Air Conditioner, Inverter, Solar Devic
0.26. Size:333K wuxi china
cs5n60fa9hd.pdf
Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS5N60F A9HD General Description VDSS 600 V CS5N60F A9HD, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor
0.27. Size:5898K first semi
fir5n60fg.pdf
FIR5N60FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Switchng Regulator Application Features High Voltage BVDSS=600V(Min.) Low Crss Crss=8.5F(Typ.) Low gate charge Qg=14.5nC(Typ.) G D S Low RDS(on) RDS(on)=1.8 g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly Location YAWW WW = Work Week FIR5N60F FIR5N60F = Specific D
0.28. Size:1218K cn super semi
sig25n60f sig25n60p sig25n60w sig25n60b.pdf
SUPER-SEMI Super Junction Insulated Gate Bipolar Transistor 600V Trench and Super Junction IGBT SIG25N60* Rev. 0.3 Sep.2021 www.supersemi.com.cn SIG25N60F/SIG25N60P/SIG25N60W/SIG25N60B 600V Trench and Super Junction IGBT General Description Super-Semi Trench and Super Junction IGBTs, VCE 600 V designed according to the superjunction (SJ) IC 25 A principle. The SJ-IGBT series pr
0.29. Size:989K cn hmsemi
hms15n60 hms15n60f hms15n60d.pdf
HM 15N60D, HM 15N60, HM 15N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 600 V VDS@Tjmax technology and design to provide excellent RDS(ON) with low RDS(ON)MAX 60 gate charge. This super junction MOSFET fits the industry s ID 1 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and
0.31. Size:383K cn hmsemi
hm5n60 hm5n60f.pdf
HM5N60 / HM5N60F HM5N60 / HM5N60F 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 4.5A, 600V, RDS(on) = 2.50 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 16nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switching
0.32. Size:408K cn haohai electr
h5n60p h5n60f.pdf
5N60 Series N-Channel MOSFET 4.5A, 600V, N H FQP5N60C H5N60P P TO-220AB 5N60 HAOHAI 50Pcs 1000Pcs 5000Pcs FQPF5N60C H5N60F F TO-220FP 5N60 Series Pin Assignment Features ID=4.5A Originative New De
Otros transistores... 18N20A
, 2N25
, 3N25
, 740
, 840
, 16N50F
, 13N50F
, 20N50
, IRF1404
, 7N60F
, 8N60A
, 8N60AF
, 10N60F
, 12N60F
, 7N65AF
, 10N65A
, 10N65AF
.
History: IRFR4104
| IRFR540Z
| IRFR3711ZC
