7N60F Todos los transistores

 ..1. Size:2269K  goford
 7n60 7n60f.pdf

7N60/7N60F GOFORD 600V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS technology. 600V 1.3 7A This latest technology has been especially designed to minimize on-state resistance, Have a high rugged avalanche characteristics.These devices are well suited for high efficiency switched mode power supplies, active p

 0.1. Size:382K  fairchild semi
 fch47n60f f085.pdf

October 2013 FCH47N60F_F085 N-Channel MOSFET 600V, 47A, 75m D Features Typ rDS(on) = 66m at VGS = 10V, ID = 47A Typ Qg(tot) = 190nC at VGS = 10V, ID = 47A G UIS Capability RoHS Compliant TO-247 Qualified to AEC Q101 G S D S Description SuperFETTM is Fairchild s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance For curren

 0.2. Size:197K  fairchild semi
 fch47n60f.pdf

February TM SuperFET FCH47N60F _F133 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.062 balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 240ns) lower gate charge performance. Ult

 0.3. Size:191K  fairchild semi
 fca47n60f.pdf

January 2009 TM SuperFET FCA47N60F 600V N-Channel MOSFET, FRFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.062 balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 240ns) lower gate charge performance.

 0.4. Size:408K  onsemi
 fch47n60f.pdf

MOSFET N-Channel, SUPERFET), FRFET) 600 V, 47 A, 73 mW FCH47N60F Description SUPERFET MOSFET is ON Semiconductor s first generation of www.onsemi.com high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to VDS RDS(ON) MAX ID MAX minimize conduct

 0.5. Size:2138K  onsemi
 fca47n60f.pdf

 0.6. Size:396K  kec
 kf7n60p kf7n60f.pdf

KF7N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF7N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G _ correction and switching mode power supp

 0.7. Size:339K  aosemi
 aotf7n60fd.pdf

AOTF7N60FD 600V, 7A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary VDS 700V@150 The AOTF7N60FD has been fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 7A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 0.8. Size:755K  jilin sino
 jcs7n60s jcs7n60b jcs7n60c jcs7n60f.pdf

 0.9. Size:904K  jilin sino
 jcs7n60bb jcs7n60sb jcs7n60cb jcs7n60fb.pdf

N R N-CHANNEL MOSFET JCS7N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L

 0.10. Size:1774K  jilin sino
 jcs7n60v jcs7n60r jcs7n60f jcs7n60c jcs7n60b jcs7n60s.pdf

 0.11. Size:277K  cystek
 mtn7n60fp.pdf

Spec. No. C409FP Issued Date 2008.09.02 CYStech Electronics Corp. Revised Date 2011.03.29 Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 1.08 (typ.) MTN7N60FP ID 7A Description The MTN7N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

 0.12. Size:523K  silikron
 ssf7n60f.pdf

SSF7N60F Main Product Characteristics VDSS 600V RDS(on) 0.9ohm(typ.) ID 7A Marking and p in TO220F Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 0.13. Size:625K  crhj
 cs7n60f a9hdy.pdf

Silicon N-Channel Power MOSFET R CS7N60F A9HDY General Description VDSS 600 V CS7N60F A9HDY, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 0.14. Size:351K  crhj
 cs7n60f a9hd.pdf

Silicon N-Channel Power MOSFET R CS7N60F A9HD General Description VDSS 600 V CS7N60F A9HD, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 0.15. Size:269K  crhj
 cs7n60f a9r.pdf

Silicon N-Channel Power MOSFET R CS7N60F A9R General Description VDSS 600 V CS7N60F A9R, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.16. Size:125K  jdsemi
 cm7n60f.pdf

R CM7N60F www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LD E 2 1 2

 0.17. Size:512K  silan
 svf7n60f svf7n60s svf7n60d.pdf

 0.18. Size:638K  silan
 svs7n60fjd2 svs7n60dd2tr svs7n60fd2.pdf

SVS7N60F(FJ)(D)D2 7A, 600V DP MOS SVS7N60F(FJ)(D)D2 N MOSFET DP MOS SVS7N60F(FJ)(D)D2 / 7A,600

 0.19. Size:627K  silan
 svf7n60t svf7n60f.pdf

SVF7N60T/F_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

 0.20. Size:3164K  citcorp
 cs7n60fa9hdy.pdf

CS7N60FA9HDY 600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability. 0.189(4.80) 0.173(4.40) Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) Low reverse transfer capacitances. 0.098(2.50) 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code Mechanical data G D S E

 0.21. Size:2737K  citcorp
 cs7n60fa9hd.pdf

CS7N60FA9HD 600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability. 0.189(4.80) 0.173(4.40) Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) Low reverse transfer capacitances. 0.098(2.50) 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code Mechanical data G D S Ep

 0.22. Size:209K  foshan
 cs7n60f.pdf

BRF7N60(CS7N60F) N-Channel MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25 )

 0.23. Size:443K  taitron
 msu7n60f msu7n60t.pdf

600V/7.4A POWER MOSFET (N-Channel) MSU7N60 600V/7.4A Power MOSFET (N-Channel) General Description MSU7N60 is a N-Channel enhancement mode power MOSFET with advanced TO-220 technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati

 0.24. Size:348K  ubiq
 qm07n60f.pdf

QM07N60F 1 2011-04-29 - 1 - N-Ch 600V Fast Switching MOSFETs General Description Product Summery The QM07N60F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 600V 1.35 7A most of the synchronous buck converter applications . Applications The QM07N60F meet the RoHS and

 0.25. Size:326K  wuxi china
 cs7n60fa9hd.pdf

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS7N60F A9HD General Description VDSS 600 V CS7N60F A9HD, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor

 0.26. Size:646K  convert
 cs7n60f cs7n60p.pdf

CS7N60F,CS7N60P nvert Suzhou Convert Semiconductor Co ., Ltd. 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS7N60F TO-220F CS7N60F CS7N60

 0.27. Size:777K  convert
 csfr7n60f csfr7n60k csfr7n60d csfr7n60u.pdf

CSFR7N60F, CSFR7N60K, nvert Suzhou Convert Semiconductor Co ., Ltd. CSFR7N60D,CSFR7N60U 600V N-Channel MOSFET FEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Motor Controls Power Factor Correction (PFC) Device Marking and Package

 0.28. Size:5294K  first semi
 fir7n60fg.pdf

FIR7N60FG Advanced N-Ch Power MOSFET-I General Description PIN Connection TO-220F FIR7N60FG is an N-channel enhancement mode power MOS field effect transistor which is produced using proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior swit

 0.29. Size:324K  cn hmsemi
 hm7n60 hm7n60f.pdf

HM7N60 / HM7N60F 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switching Fast switchin

 0.30. Size:381K  cn haohai electr
 h7n60p h7n60f.pdf

7N60 Series N-Channel MOSFET 7A, 600V, N H FQP7N60C H7N60P P TO-220AB HAOHAI 50Pcs 1000Pcs 5000Pcs 7N60 FQPF7N60C H7N60F F TO-220FP 7N60 Series Pin Assignment APPLICATION ID=7A ELECTRONIC BALLAST

 0.31. Size:252K  inchange semiconductor
 aotf7n60fd.pdf

isc N-Channel MOSFET Transistor AOTF7N60FD FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =1.45 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur