2SK793 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK793

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente (Vds): 850 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 110 nS

Conductancia de drenaje-sustrato (Cd): 190 pF

Resistencia drenaje-fuente RDS(on): 2.5 Ohm

Empaquetado / Estuche: SC65

Búsqueda de reemplazo de MOSFET 2SK793

2SK793 Datasheet (PDF)

1.1. 2sk793.pdf Size:237K _update-mosfet

isc N-Channel MOSFET Transistor 2SK793 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V =850V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, convert

1.2. 2sk793.pdf Size:43K _toshiba2

5.1. 2sk792.pdf Size:43K _update

5.2. 2sk795.pdf Size:145K _update

查询"2SK795"供应商查询"2SK795"供应商

5.3. 2sk790.pdf Size:229K _update

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5.4. 2sk796-a.pdf Size:71K _update

5.5. 2sk791.pdf Size:101K _update

5.6. 2sk794.pdf Size:43K _update

5.7. 2sk790.pdf Size:247K _update-mosfet

isc N-Channel MOSFET Transistor 2SK790 DESCRIPTION ·Drain Current –I =15A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, conve

5.8. 2sk796a.pdf Size:197K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK796A DESCRIPTION ·Drain Current –I =3A@ T =25℃ D C ·Drain Source Voltage- : V =900V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.9. 2sk796.pdf Size:197K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK796 DESCRIPTION ·Drain Current –I =3A@ T =25℃ D C ·Drain Source Voltage- : V =800V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.10. 2sk794.pdf Size:204K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK794 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V =900V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

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