2SK2806-01 Todos los transistores

 ..1. Size:318K  fuji
 2sk2806-01.pdf

2SK2806-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Features Outline Drawings TO-220AB High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings (Tc=25

 8.1. Size:35K  1
 2sk2804.pdf

2SK2804 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 450 V I = 100 A, V = 0V (BR) DSS D GS V 450 V DSS I 100 nA V = 30V GSS GS V 30 V GSS I 100 A V = 450V, V = 0V DSS DS GS I 5 A D V 2.0 4.0 V V = 10V, I = 1mA TH DS D I 20 A D (

 8.2. Size:41K  1
 2sk2802.pdf

2SK2802 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-537C (Z) 4th. Edition Jun 1998 Features Low on-resistance RDS(on) = 0. 2 typ. (VGS = 4 V, ID = 100 mA) 2.5V gate drive devices. Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK2802 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to sour

 8.3. Size:25K  1
 2sk2805.pdf

2SK2805 External dimensions 2 ...... FM100 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 450 V I = 100 A, V = 0V (BR) DSS D GS V 450 V DSS I 100 nA V = 30V GSS GS V 30 V GSS I 100 A V = 450V, V = 0V DSS DS GS I 15 A D V 2.0 3.0 4.0 V V = 10V, I = 1mA TH DS D I 60

 8.4. Size:102K  renesas
 rej03g1035 2sk2800ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:88K  renesas
 2sk2800.pdf

2SK2800 Silicon N Channel MOS FET High Speed Power Switching REJ03G1035-0900 (Previous ADE-208-513G) Rev.9.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 15 m typ. High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2.

 8.6. Size:314K  fuji
 2sk2808-01mr.pdf

2SK2808-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Features Outline Drawings TO-220F High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings (Tc=2

 8.7. Size:333K  fuji
 2sk2809-01mr.pdf

2SK2809-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Features Outline Drawings TO-220F High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings (Tc=2

 8.8. Size:317K  fuji
 2sk2807-01l-01s.pdf

2SK2807-01L,S FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Features Outline Drawings High speed switching T-pack(L) T-pack(S) Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum

 8.9. Size:43K  sanken-ele
 2sk2803.pdf

2SK2803 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 450 V I = 100 A, V = 0V (BR) DSS D GS V 450 V DSS I 100 nA V = 30V GSS GS V 30 V GSS I 100 A V = 450V, V = 0V DSS DS GS I 3 A D V 2.0 4.0 V V = 10V, I = 1mA TH DS D I 12 A D (

 8.10. Size:279K  inchange semiconductor
 2sk2809.pdf

isc N-Channel MOSFET Transistor 2SK2809 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABSO

 8.11. Size:252K  inchange semiconductor
 2sk2804.pdf

isc N-Channel MOSFET Transistor 2SK2804 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB

 8.12. Size:252K  inchange semiconductor
 2sk2803.pdf

isc N-Channel MOSFET Transistor 2SK2803 FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 2.8 (Max) 100% avalanche tested DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 8.13. Size:274K  inchange semiconductor
 2sk2805.pdf

isc N-Channel MOSFET Transistor 2SK2805 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.38 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB