FTK9451 Todos los transistores

 ..1. Size:215K  first silicon
 ftk9451.pdf

SEMICONDUCTOR FTK9451 TECHNICAL DATA P-Channel 20-V(D-S) MOSFET SOT-89 Description The Advanced Power MOSFETs provide the desigher with the 1. GATE best combination of fast switching, ruggedized device desigh, 2. DRAIN ultra low on- resistance and cost-effectiveness. 3. SOURCE 1 2 3 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Units Dr

 8.1. Size:331K  first silicon
 ftk9452.pdf

SEMICONDUCTOR FTK9452 TECHNICAL DATA N-Channel 20-V(D-S) MOSFET A C H G The Advanced Power MOSFETs provide the desigher with the best combination of fast switching, ruggedized device desigh, D D K ultra low on- resistance and cost-effectiveness. F F D DIM MILLIMETERS A 4.70 MAX _ + B 2.50 0.20 C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 E 4.25 MAX G _ + F 1.50 0.10 G 0.

 9.1. Size:330K  first silicon
 ftk9435.pdf

SEMICONDUCTOR FTK9435 TECHNICAL DATA D DESCRIPTION The FTK9435 uses advanced trench technology to G provide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S Schematic diagram D D D D GENERAL FEATURES 7 6 5 8 VDS = -30V,ID = -5.3A RDS(ON)