FTK100N10P Todos los transistores

 ..1. Size:293K  first silicon
 ftk100n10p.pdf

SEMICONDUCTOR FTK100N10P TECHNICAL DATA N-Channel Power MOSFET (100V/100A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25 ) Symbol Rating Unit 1.Gate 2.Drai

 9.1. Size:283K  first silicon
 ftk10n65p f dd.pdf

SEMICONDUCTOR FTK10N65P / F / DD TECHNICAL DATA 10 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pul

 9.2. Size:484K  first silicon
 ftk1090.pdf

SEMICONDUCTOR FTK1090 TECHNICAL DATA Feathers ID =15A Advanced trench process technology BV=100V Special designed for Convertors and power controls Rdson=0.06 (Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description The FTK1090 is a new generation of high voltage an

 9.3. Size:488K  first silicon
 ftk1013.pdf

SEMICONDUCTOR FTK1013 TECHNICAL DATA P-Channel 1.8-V (G-S) MOSFET FEATURES TrenchFET Power MOSFET 1.8-V Rated Gate-Source ESD Protected 2000 V High-Side Switching Low On-Resistance 1.2 SOT-523 Low Threshold 0.8 V (typ) Fast Switching Speed 14 ns S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and

 9.4. Size:468K  first silicon
 ftk10n10.pdf

SEMICONDUCTOR FTK10N10 TECHNICAL DATA FTK10N10 N-Channel Power MOSFET A I GENERAL DESCRIPTION C J The FTK10N10 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. DIM MILLIMETERS A 6 50 0 2 B 5 60 0 2 C 5 20 0 2 D 1 50 0 2 E 2 70 0 2 FEATURE F 2 30 0 1

 9.5. Size:341K  first silicon
 ftk1016.pdf

SEMICONDUCTOR FTK1016 TECHNICAL DATA Feathers ID =75A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=16m (Max. Fully characterized avalanche voltage and current Description The FTK1016 is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability

 9.6. Size:339K  first silicon
 ftk10n60p f dd.pdf

SEMICONDUCTOR FTK10N60P/F/DD TECHNICAL DATA 10 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pulse