FTK10N60F MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FTK10N60F datasheet

6.1. Size:339K first silicon
ftk10n60p f dd.pdf pdf_icon

SEMICONDUCTOR FTK10N60P/F/DD TECHNICAL DATA 10 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pulse

7.1. Size:283K first silicon
ftk10n65p f dd.pdf pdf_icon

SEMICONDUCTOR FTK10N65P / F / DD TECHNICAL DATA 10 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pul

8.1. Size:468K first silicon
ftk10n10.pdf pdf_icon

SEMICONDUCTOR FTK10N10 TECHNICAL DATA FTK10N10 N-Channel Power MOSFET A I GENERAL DESCRIPTION C J The FTK10N10 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. DIM MILLIMETERS A 6 50 0 2 B 5 60 0 2 C 5 20 0 2 D 1 50 0 2 E 2 70 0 2 FEATURE F 2 30 0 1

Otros transistores... FTK9452 , FTK03N10 , FTK100N10P , FTK1013 , FTK1016 , FTK1090 , FTK10N10 , FTK10N60DD , IRFP250 , FTK10N60P , FTK8810 , FTK8810L , FTK8822 , FTK8N65DD , FTK8N65F , FTK8N65P , FTK8N80DD .