FTK80N10P MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FTK80N10P datasheet

..1. Size:232K first silicon
ftk80n10p.pdf pdf_icon

SEMICONDUCTOR FTK80N10P TECHNICAL DATA N-Channel Power MOSFET (100V/80A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25 ) Symbol Rating Unit 1.Gate 2.Drain

8.1. Size:561K first silicon
ftk80n08.pdf pdf_icon

SEMICONDUCTOR FTK80N08 TECHNICAL DATA N-CHANNEL MOSFET (75V/80A, Rds=10m ) Feathers TO-220 Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current 1 Avalanche Energy 100% test 2 3 Description The FTK80N08 is a new generation of middle voltag

8.2. Size:336K first silicon
ftk80n03d.pdf pdf_icon

SEMICONDUCTOR FTK80N03D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION The FTK80N03D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2 provide excellent RDS(ON) with low gate charge. B 5 60 0 2 C 5 20 0 2 It can be used in awide variety of applications. D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MAX I 2 30 0

Otros transistores... FTK8N65P , FTK8N80DD , FTK8N80F , FTK8N80P , FTK9435 , FTK9926 , FTK80N03D , FTK80N08 , 8N60 , FTK8205A , FTK830P , FTK830F , FTK830I , FTK830D , FTK84 , FTK840P , FTK840F .