IRF5305 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF5305

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Máxima disipación de potencia (Pd): 110 W

Voltaje máximo drenador - fuente |Vds|: 55 V

Voltaje máximo fuente - puerta |Vgs|: 20 V

Corriente continua de drenaje |Id|: 31 A

Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V

Carga de la puerta (Qg): 63(max) nC

Tiempo de subida (tr): 66 nS

Conductancia de drenaje-sustrato (Cd): 520 pF

Resistencia entre drenaje y fuente RDS(on): 0.06 Ohm

Paquete / Cubierta: TO220AB

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IRF5305 Datasheet (PDF)

..1. Size:124K international rectifier
irf5305.pdf

PD - 91385BIRF5305HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.06 P-ChannelG Fully Avalanche RatedID = -31ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area

..2. Size:182K international rectifier
irf5305pbf.pdf

PD - 94788IRF5305PbFHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.06 P-ChannelG Fully Avalanche RatedID = -31A Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe

..3. Size:182K infineon
irf5305pbf.pdf

..4. Size:241K inchange semiconductor
irf5305.pdf

isc P-Channel MOSFET Transistor IRF5305,IIRF5305FEATURESStatic drain-source on-resistance:RDS(on)0.06Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andreliab

0.1. Size:171K international rectifier
irf5305s.pdf

PD - 91386CIRF5305S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF5305S)VDSS = -55V Low-profile through-hole (IRF5305L) 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG P-ChannelID = -31A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

0.2. Size:700K international rectifier
irf5305lpbf irf5305spbf.pdf

PD - 95957IRF5305S/LPbF Lead-Freewww.irf.com 14/21/05IRF5305S/LPbF2 www.irf.comIRF5305S/LPbFwww.irf.com 3IRF5305S/LPbF4 www.irf.comIRF5305S/LPbFwww.irf.com 5IRF5305S/LPbF6 www.irf.comIRF5305S/LPbFwww.irf.com 7IRF5305S/LPbFD2Pak Package OutlineD2Pak Part Marking InformationT HIS IS AN IRF530S WIT HPART NUMBERLOT CODE 8024INTERNATIONALASSE

0.3. Size:700K infineon
irf5305spbf irf5305lpbf.pdf

0.4. Size:2441K cn vbsemi
irf5305str.pdf

IRF5305STRwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.048at VGS = - 10 V- 35- 60 60 100 % Rg and UIS Tested0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Power Switch Loa

Otros transistores... IRF520NS , IRF521 , IRF5210 , IRF5210L , IRF5210S , IRF522 , IRF523 , IRF530 , 10N60 , IRF5305L , IRF5305S , IRF530A , IRF530FI , IRF530N , IRF530NL , IRF530NS , IRF531 .

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