FTK7000 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FTK7000
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Id|ⓘ - Corriente continua de drenaje: 0.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Cossⓘ - Capacitancia de salida: 10 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: TO92

Búsqueda de reemplazo de MOSFET FTK7000

FTK7000 Datasheet (PDF)

..1. Size:148K first silicon
ftk7000.pdf

SEMICONDUCTORFTK7000TECHNICAL DATAB CFTK7000 MOSFET (N-Channel) DIM MILLIMETERSA 4.70 MAXEFEATURES B 4.80 MAXGC 3.70 MAXD High density cell design for low RDS(ON) D 0.55 MAXE 1.00F 1.27 Voltage controlled small signal switch G 0.85H 0.45_ Rugged and reliable HJ 14.00 0.50L 2.30F FM 0.51 MAX High saturation current capability 1. SOURCE1 2 3

8.1. Size:565K first silicon
ftk7002e.pdf

SEMICONDUCTORFTK7002ETECHNICAL DATASmall Signal MOSFET115 mAmps, 60 VoltsNChannel SOT233Features 21) Low on-resistance. (MAX 7.5)12) Fast switching speed.3) Low-voltage drive.SOT 23 (TO236AB)4) Easily designed drive circuits.5) Easy to parallel.6) Pb-Free package is available.7) Esd Protected : 2000VDevice Marking and Ordering Information

8.2. Size:408K first silicon
ftk7002d.pdf

SEMICONDUCTORFTK7002DTECHNICAL DATADual Small Signal MOSFET115 mAmps, 60 VoltsN-Channel SC-88 We declare that the material of product are Halogen Free andcompliance with RoHS requirements. ESD Protected:1000VMAXIMUM RATINGSRating Symbol Value Unit3 2 1Drain-Source Voltage VDSS 60 VdcD2 G1 S1Drain-Gate Voltage (RGS = 1.0 M ) VDGR 60 VdcDrain Current ID

8.3. Size:728K first silicon
ftk7002u.pdf

SEMICONDUCTORFTK7002UTECHNICAL DATASmall Signal MOSFET115 mAmps, 60 Volts3NChannel SOT3232 We declare that the material of product are Halogen Free and 1compliance with RoHS requirements.SOT-323 ESD Protected:1000VMAXIMUM RATINGS(Ta = 25 )Rating Symbol Value UnitDrainSource Voltage VDSS 60VdcDrainGate Voltage (RGS VDGR 60VdcSimplifie

8.4. Size:285K first silicon
ftk7002en.pdf

SEMICONDUCTORFTK7002ENTECHNICAL DATASmall Signal MOSFET30 V, 154 mA, Single, N-Channel, GateESD Protection, SC-893Features Low Gate Charge for Fast Switching1 Small 1.6 X 1.6 mm Footprint2 ESD Protected Gate We declare that the material of product is ROHS compliant SC-89and halogen free.Applications Power Management Load Switch Level Shift

8.5. Size:192K first silicon
ftk7002.pdf

SEMICONDUCTORFTK7002TECHNICAL DATASmall Signal MOSFET115 mAmps, 60 Volts3NChannel SOT232 We declare that the material of product are Halogen Free and 1compliance with RoHS requirements.SOT 23 (TO236AB) ESD Protected:1000VMAXIMUM RATINGSRating Symbol Value Unit Simplified SchematicDrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1

8.6. Size:364K first silicon
ftk7002k.pdf

SEMICONDUCTORFTK7002KTECHNICAL DATASmall Signal MOSFET 380 mAmps, 60 VoltsNChannel SOT233Features ESD Protected 21 Low RDS(on) Surface Mount PackageSOT 23 (TO236AB) This is a Pb- Free Device We declare that the material of product are Halogen Free andcompliance with RoHS requirements.Applications Low Side Load Switch Level

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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