FTK7510 Todos los transistores

 

FTK7510 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FTK7510
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15.6 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: TO220
 

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FTK7510 Datasheet (PDF)

 ..1. Size:388K  first silicon
ftk7510 1.pdf pdf_icon

FTK7510

SEMICONDUCTOR FTK7510F/PTECHNICAL DATAID=75A Feathers: BV=75V Advanced trench process technology Rdson=10mohm Special designed for Convertors and power controls P : High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current 12 Avalanche Energy 100% test 3TO-220Description: The FTK7510 is a new generation of middle voltag

 ..2. Size:327K  first silicon
ftk7510.pdf pdf_icon

FTK7510

SEMICONDUCTOR FTK7510 TECHNICAL DATAFeathers: ID=75A Advanced trench process technology BV=75V Special designed for Convertors and power controls Rdson=10mohm High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The FTK7510 is a new generation of middle voltage and high current N

 9.1. Size:366K  first silicon
ftk75n75.pdf pdf_icon

FTK7510

SEMICONDUCTORFTK75N75TECHNICAL DATAID=75A Feathers: BV=75V Advanced trench process technology Rdson=10mohm Special designed for Convertors and power controls High density cell design for ultra low Rdson TO-220 Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The FTK75N75 is a new generation of middle voltage and 123

 9.2. Size:566K  first silicon
ftk7509.pdf pdf_icon

FTK7510

SEMICONDUCTOR FTK7509TECHNICAL DATA Feathers:ID=80A Advanced trench process technologyBV=80V Special designed for Convertors and power controlsRdson=6.3m (Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description:The FTK7509 is a new generation of middle voltage and hig

Otros transistores... FTK7002EN , FTK7002K , FTK7002U , FTK70N06 , FTK730F , FTK730P , FTK7328 , FTK7509 , IRFP460 , FTK7510F , FTK7510P , FTK6014 , FTK6014A , FTK60N04D , FTK60P05S , FTK6401 , FTK640F .

History: CEP80N15 | AM20N15-250B | DMN3032LFDB | H7N1005LS | PD601CX | P2103NVG | APT8090BN

 

 
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