FTK6014 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FTK6014  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 120 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14.2 nS

Cossⓘ - Capacitancia de salida: 190 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: TO220

  📄📄 Copiar 

 Búsqueda de reemplazo de FTK6014 MOSFET

- Selecciónⓘ de transistores por parámetros

 

FTK6014 datasheet

 ..1. Size:473K  first silicon
 ftk6014.pdf pdf_icon

FTK6014

SEMICONDUCTOR FTK6014 TECHNICAL DATA Feathers ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14m max. Fully characterized avalanche voltage and current Description The FTK6014 is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device re

 0.1. Size:277K  first silicon
 ftk6014a.pdf pdf_icon

FTK6014

SEMICONDUCTOR FTK6014A TECHNICAL DATA Feathers ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14m max. Fully characterized avalanche voltage and current Description The FTK6014A is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability

 9.1. Size:341K  first silicon
 ftk60n04d.pdf pdf_icon

FTK6014

SEMICONDUCTOR FTK60N04D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION The FTK60N04D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2 provide excellent RDS(ON) with low gate charge. B 5 60 0 2 C 5 20 0 2 It can be used in awide variety of applications. D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MAX I 2 30 0

 9.2. Size:455K  first silicon
 ftk60p05s.pdf pdf_icon

FTK6014

SEMICONDUCTOR FTK60P05S TECHNICAL DATA P-Channel Enhancement Mode Power MOSFET ID V(BR)DSS RDS(on)MAX SOP-8 -5A 10V -60V 80m @- Description The FTK60P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Feature Application VDS =-60V,ID =-5A Power switching application

MOSTRAR MÁS

Otros transistores... FTK70N06, FTK730F, FTK730P, FTK7328, FTK7509, FTK7510, FTK7510F, FTK7510P, 2N7002, FTK6014A, FTK60N04D, FTK60P05S, FTK6401, FTK640F, FTK640P, FTK6601, FTK6601S