FTK60N04D MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FTK60N04D datasheet

..1. Size:341K first silicon
ftk60n04d.pdf pdf_icon

SEMICONDUCTOR FTK60N04D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION The FTK60N04D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2 provide excellent RDS(ON) with low gate charge. B 5 60 0 2 C 5 20 0 2 It can be used in awide variety of applications. D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MAX I 2 30 0

9.1. Size:277K first silicon
ftk6014a.pdf pdf_icon

SEMICONDUCTOR FTK6014A TECHNICAL DATA Feathers ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14m max. Fully characterized avalanche voltage and current Description The FTK6014A is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability

9.2. Size:473K first silicon
ftk6014.pdf pdf_icon

SEMICONDUCTOR FTK6014 TECHNICAL DATA Feathers ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14m max. Fully characterized avalanche voltage and current Description The FTK6014 is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device re

9.3. Size:455K first silicon
ftk60p05s.pdf pdf_icon

SEMICONDUCTOR FTK60P05S TECHNICAL DATA P-Channel Enhancement Mode Power MOSFET ID V(BR)DSS RDS(on)MAX SOP-8 -5A 10V -60V 80m @- Description The FTK60P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Feature Application VDS =-60V,ID =-5A Power switching application

Otros transistores... FTK730P , FTK7328 , FTK7509 , FTK7510 , FTK7510F , FTK7510P , FTK6014 , FTK6014A , IRFP260N , FTK60P05S , FTK6401 , FTK640F , FTK640P , FTK6601 , FTK6601S , FTK6808 , FTK6N70P .