FTK50N06D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FTK50N06D Datasheet (PDF)

..1. Size:336K first silicon
ftk50n06d.pdf pdf_icon

SEMICONDUCTORFTK50N06DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION The FTK50N06D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2provide excellent RDS(ON) with low gate charge. B 5 60 0 2C 5 20 0 2It can be used in awide variety of applications. D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAX I 2 30 0

0.1. Size:255K first silicon
ftk50n06dd.pdf pdf_icon

SEMICONDUCTORFTK50N06DDTECHNICAL DATAN-Channel Power MOSFET (60V/50A) PurposeSuited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated productsFeatureLow RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25) Rating Symbol Unit V 60 V DSS

6.1. Size:222K first silicon
ftk50n06 ftk50n06p f.pdf pdf_icon

SEMICONDUCTORFTK50N06P / FTECHNICAL DATAPower MOSFET50 Amps, 60 VoltsN-CHANNEL POWER MOSFET P :1TO-220 DESCRIPTION The FTK50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max F :threshold voltages of 4 volt. 1It is mainly suitable electronic

7.1. Size:333K first silicon
ftk50n03d.pdf pdf_icon

SEMICONDUCTORFTK50N03DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION The FTK50N03D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2provide excellent RDS(ON) with low gate charge. B 5 60 0 2C 5 20 0 2It can be used in awide variety of applications. D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAX I 2 30 0

Otros transistores... FTK640P , FTK6601 , FTK6601S , FTK6808 , FTK6N70P , FTK6N70F , FTK6N70I , FTK6N70D , 7N65 , FTK50N06DD , FTK50N06F , FTK50N10P , FTK50P03PDFN56 , FTK55P30D , FTK5903DC , FTK5N50D , FTK5N80DD .