FTK50N06DD Todos los transistores

 ..1. Size:255K  first silicon
 ftk50n06dd.pdf

SEMICONDUCTOR FTK50N06DD TECHNICAL DATA N-Channel Power MOSFET (60V/50A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25 ) Rating Symbol Unit V 60 V DSS

 5.1. Size:336K  first silicon
 ftk50n06d.pdf

SEMICONDUCTOR FTK50N06D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION The FTK50N06D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2 provide excellent RDS(ON) with low gate charge. B 5 60 0 2 C 5 20 0 2 It can be used in awide variety of applications. D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MAX I 2 30 0

 6.1. Size:222K  first silicon
 ftk50n06 ftk50n06p f.pdf

SEMICONDUCTOR FTK50N06P / F TECHNICAL DATA Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET P 1 TO-220 DESCRIPTION The FTK50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max F threshold voltages of 4 volt. 1 It is mainly suitable electronic

 7.1. Size:333K  first silicon
 ftk50n03d.pdf

SEMICONDUCTOR FTK50N03D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION The FTK50N03D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2 provide excellent RDS(ON) with low gate charge. B 5 60 0 2 C 5 20 0 2 It can be used in awide variety of applications. D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MAX I 2 30 0