FTK50N03D Todos los transistores

 

FTK50N03D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FTK50N03D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: TO252
 

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FTK50N03D Datasheet (PDF)

 ..1. Size:333K  first silicon
ftk50n03d.pdf pdf_icon

FTK50N03D

SEMICONDUCTORFTK50N03DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION The FTK50N03D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2provide excellent RDS(ON) with low gate charge. B 5 60 0 2C 5 20 0 2It can be used in awide variety of applications. D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAX I 2 30 0

 7.1. Size:336K  first silicon
ftk50n06d.pdf pdf_icon

FTK50N03D

SEMICONDUCTORFTK50N06DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION The FTK50N06D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2provide excellent RDS(ON) with low gate charge. B 5 60 0 2C 5 20 0 2It can be used in awide variety of applications. D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAX I 2 30 0

 7.2. Size:222K  first silicon
ftk50n06 ftk50n06p f.pdf pdf_icon

FTK50N03D

SEMICONDUCTORFTK50N06P / FTECHNICAL DATAPower MOSFET50 Amps, 60 VoltsN-CHANNEL POWER MOSFET P :1TO-220 DESCRIPTION The FTK50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max F :threshold voltages of 4 volt. 1It is mainly suitable electronic

 7.3. Size:255K  first silicon
ftk50n06dd.pdf pdf_icon

FTK50N03D

SEMICONDUCTORFTK50N06DDTECHNICAL DATAN-Channel Power MOSFET (60V/50A) PurposeSuited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated productsFeatureLow RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25) Rating Symbol Unit V 60 V DSS

Otros transistores... FTK50N10P , FTK50P03PDFN56 , FTK55P30D , FTK5903DC , FTK5N50D , FTK5N80DD , FTK5N80F , FTK5N80P , 8205A , FTK50N06P , FTK1206 , FTK1208 , FTK1216 , FTK12N10S , FTK12N65DD , FTK12N65F , FTK12N65P .

History: UTC654 | SVF13N50S | AM30N08-80D | IPB015N08N5 | ME4953-G

 

 
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