FTK2N60D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FTK2N60D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 40 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm

Encapsulados: TO252

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FTK2N60D datasheet

 7.1. Size:295K  first silicon
 ftk2n60p f d i.pdf pdf_icon

FTK2N60D

SEMICONDUCTOR FTK2N60P / F / D / I TECHNICAL DATA 2 Amps, 600 Volts N-CHANNEL MOSFET I 1 TO - 251 DESCRIPTION The FTK 2N60 is a high voltage MOSFET and is designed to D have better characteristics, such as fast switching time, low gate 1 TO - 252 charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high sp

 8.1. Size:340K  first silicon
 ftk2n65p f d i.pdf pdf_icon

FTK2N60D

SEMICONDUCTOR FTK2N65P / F / D / I TECHNICAL DATA 2 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect Transistors are produced using planar stripe, DMOS I technology. 1 This advanced technology has been especially tailored TO - 251 to minimize on - state resistance , provide superior switching performance,and Withstand high energy

Otros transistores... FTK138U, FTK15N10D, FTK1N60P, FTK1N60F, FTK1N60D, FTK1N60I, FTK1N60T, FTK1N60L, AO4407, FTK2N60F, FTK2N60I, FTK2N60P, FTK2N65D, FTK2N65F, FTK2N65I, FTK2N65P, FTK4N60D