FTK4N60I Todos los transistores

 

FTK4N60I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FTK4N60I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 106 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO251
 

 Búsqueda de reemplazo de FTK4N60I MOSFET

   - Selección ⓘ de transistores por parámetros

 

FTK4N60I Datasheet (PDF)

 7.1. Size:171K  first silicon
 ftk4n60p f d i.pdf pdf_icon

FTK4N60I

SEMICONDUCTORFTK4N60P / F / D / ITECHNICAL DATAPower MOSFET4 Amps, 600 VoltI :N-CHANNEL POWER MOSFET1TO - 251D :DESCRIPTION1TO - 252The FTK 4N60 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalancheP :characteristics. This power MOSFET is usua

 8.1. Size:381K  first silicon
 ftk4n65p f d i.pdf pdf_icon

FTK4N60I

SEMICONDUCTORFTK4N65P/F/I/DTECHNICAL DATA4 Amps, 650 Volt Power MOSFETN-CHANNEL POWER MOSFETI :1TO - 251D :DESCRIPTION1TO - 252The FTK4N65 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalancheP :characteristics. This power MOSFET is usually used

 9.1. Size:398K  first silicon
 ftk4n70p f d i.pdf pdf_icon

FTK4N60I

SEMICONDUCTORFTK4N70P/F/I/DTECHNICAL DATA4 Amps, 700 Volt Power MOSFETN-CHANNEL POWER MOSFETI :1TO - 251DESCRIPTIOND :1TO - 252The FTK4N70 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalancheP :characteristics. This power MOSFET is usually used

Otros transistores... FTK2N60I , FTK2N60P , FTK2N65D , FTK2N65F , FTK2N65I , FTK2N65P , FTK4N60D , FTK4N60F , 4N60 , FTK4N60P , FTK4N65D , FTK4N65F , FTK4N65I , FTK4N65P , FTK4N70D , FTK4N70F , FTK4N70I .

History: AFP6801 | IXZR18N50A | IRF7105PBF-1 | AP30N30WI | STD6N80K5 | FQD30N06 | TSM85N10CZ

 

 
Back to Top

 


 
.