FTK4N70F Todos los transistores

 

FTK4N70F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FTK4N70F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.7 Ohm
   Paquete / Cubierta: TO220F

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FTK4N70F Datasheet (PDF)

 7.1. Size:398K  first silicon
ftk4n70p f d i.pdf

FTK4N70F
FTK4N70F

SEMICONDUCTORFTK4N70P/F/I/DTECHNICAL DATA4 Amps, 700 Volt Power MOSFETN-CHANNEL POWER MOSFETI :1TO - 251DESCRIPTIOND :1TO - 252The FTK4N70 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalancheP :characteristics. This power MOSFET is usually used

 9.1. Size:381K  first silicon
ftk4n65p f d i.pdf

FTK4N70F
FTK4N70F

SEMICONDUCTORFTK4N65P/F/I/DTECHNICAL DATA4 Amps, 650 Volt Power MOSFETN-CHANNEL POWER MOSFETI :1TO - 251D :DESCRIPTION1TO - 252The FTK4N65 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalancheP :characteristics. This power MOSFET is usually used

 9.2. Size:171K  first silicon
ftk4n60p f d i.pdf

FTK4N70F
FTK4N70F

SEMICONDUCTORFTK4N60P / F / D / ITECHNICAL DATAPower MOSFET4 Amps, 600 VoltI :N-CHANNEL POWER MOSFET1TO - 251D :DESCRIPTION1TO - 252The FTK 4N60 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalancheP :characteristics. This power MOSFET is usua

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