FTK3022 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FTK3022 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FTK3022

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15.6 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: TO220

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FTK3022 datasheet

..1. Size:315K first silicon
ftk3022.pdf pdf_icon

SEMICONDUCTOR FTK3022 TECHNICAL DATA Feathers ID =60A Advanced trench process technology BV=100V Ultra low Rdson, typical 16mohm Rdson=22mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description The FTK3022 is a new generation of middle voltage and high current N Channel enhancement mode trench power FTK3022 TOP View (TO

9.1. Size:304K first silicon
ftk3018.pdf pdf_icon

SEMICONDUCTOR FTK3018 TECHNICAL DATA Silicon N-channel MOSFET 100mA, 30V Features 1) Low on-resistance. 3 2) Fast switching speed. 2 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 1 4) Easily designed drive circuits. 5) Easy to parallel. SOT 323 ESD>500V We declare that the material of product compliance with RoHS requirements. N

9.2. Size:250K first silicon
ftk3004d.pdf pdf_icon

SEMICONDUCTOR FTK3004D TECHNICAL DATA DESCRIPTION The FTK3004D uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is D suitable for use as a load switch or in PWM applications. G GENERAL FEATURES S VDS = 30V,ID =55A Schematic diagram RDS(ON)

9.3. Size:421K first silicon
ftk3051.pdf pdf_icon

SEMICONDUCTOR FTK3051 TECHNICAL DATA Main Product Characteristics D 1 6 D D VDSS -30V 2 5 D D G RDS(on) 45mohm(typ.) 3 4 G S S ID -4A SOT23-6 Marking and pin Schematic diagram A ssignment Features and Benefits Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resista

Otros transistores... FTK2324, FTK2333, FTK2341E, FTK25N03PDFN33, FTK2627, FTK2816E, FTK3004D, FTK3018, IRFP064N, FTK3051, FTK3134K, FTK3134KD, FTK3139K, FTK3341, FTK3400, FTK3401, FTK3404

FTK3022 Todos los transistores