FTK3415 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FTK3415
Código: R15
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.5 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 8 V
Corriente continua de drenaje |Id|: 4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 17.2 nC
Tiempo de subida (tr): 17 nS
Conductancia de drenaje-sustrato (Cd): 205 pF
Resistencia entre drenaje y fuente RDS(on): 0.06 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET FTK3415
FTK3415 Datasheet (PDF)
ftk3415.pdf
SEMICONDUCTORFTK3415TECHNICAL DATADESCRIPTION DThe FTK3415 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as 1.8V. This device is suitable for use asG a load switch applications.SGENERAL FEATURES Schematic diagram VDS = -20V,ID =-4A RDS(ON)
ftk3415l.pdf
SEMICONDUCTOR FTK3415LTECHNICAL DATAP-Channel 20V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX SOT-23-6L 50m@-4.5V -4.0A-20V 60m@-2.5V73m@-1. 8VFEATURE APPLICATIONExcellent RDS(ON), low gate charge,low gate voltage Load switch and in PWM applicatopns High power and current handing capabilityMARKING: Equivalent Circuit PIN1Maximum ratings (Ta=25 unless otherwise
ftk3400.pdf
SEMICONDUCTORFTK3400TECHNICAL DATAN-Channel Enhancement Mode Field Effect Transistor DFEATURE GHigh dense cell design for extremely low R SDS(ON)Schematic diagram Exceptional on-resistance and maximum DC current capability D3R0G 1 2 SMarking and pin AssignmentSOT-23 top view Maximum ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit
ftk3404.pdf
SEMICONDUCTORFTK3404TECHNICAL DATAN-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX 3 30m@ 10V30V5.8A 2142m@4.5V SOT231. GATE DESCRIPTION 2. SOURCE 3. DRAIN The FTK3404 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suit able for use as a load switch or in PWM applications.The s
ftk3443.pdf
SEMICONDUCTORFTK3443TECHNICAL DATAP-Channel 20-V(D-S) MOSFET BFEATURE B1 Fast Switching Speed DIM MILLIMETERS1 6 Low Gate Charge A 2 920 12 5 A1 1 90 1 High Performance Trench Technology for extremely Low RDS(on)B 2 80 153 4 D B1 1 60 1 C 0 95D 0 40 1G 0 1MAX This P-Channel MOSFET is produced using advanced PowerTrench H 1 10 05process tha
ftk3407l.pdf
SEMICONDUCTORFTK3407LTECHNICAL DATAP-Channel Enhancement Mode Field Effect Transistor General Description SOT-23-6L The FTK3407L uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications.MARKING: R7 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit
ftk3407.pdf
SEMICONDUCTORFTK3407TECHNICAL DATADDESCRIPTIONThe FTK3407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURESD VDS = -30V,ID = -4.1A 3RDS(ON)
ftk3401.pdf
SEMICONDUCTORFTK3401TECHNICAL DATADDESCRIPTIONThe FTK3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURESD VDS = -30V,ID = -4.2A 3RDS(ON)
ftk3439kd.pdf
SEMICONDUCTORFTK3439KDTECHNICAL DATAN channel+P Channel MOS FETID V(BR)DSS RDS(on)MAX SOT-363380m@4.5V 450m@2.5V 20V0.75A800m@1.8V 520m@-4.5V -20V700m@-2.5V -0.66A950m@-1.8V FEATURE APPLICATION Surface Mount Package Load/ Power Switching Interfacing Switching Low RDS(on) Operated at Low Logic Level Gate Drive Battery Management for
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