IRF540FI Datasheet. Equivalente

 ..1. Size:205K  inchange semiconductor
 irf540fi.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF540FI FEATURES Low R DS(on) V Rated at 20V GS Silicon Gate for Fast Switching Speed Rugged Low Drive Requirements Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed especially for high voltage,high speed applications, such as off-line switching power su

 8.1. Size:144K  motorola
 irf540 mot.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF540/D Advance Information IRF540 TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 27 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS efficient design also offers a drain

 8.2. Size:142K  motorola
 irf540.rev3.2.pdf

 8.3. Size:277K  international rectifier
 irf540ns irf540nl.pdf

PD - 91342B IRF540NS IRF540NL l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 44m Description G Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing ID = 33A S techniques to achieve extremely l

 8.4. Size:326K  international rectifier
 auirf540zstrl.pdf

PD - 96326 AUTOMOTIVE GRADE AUIRF540Z AUIRF540ZS Features HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance V(BR)DSS 100V l 175 C Operating Temperature RDS(on) typ. 21m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G max. 26.5m l Lead-Free, RoHS Compliant ID 36A l Automotive Qualified * S Description Specifically designe

 8.5. Size:173K  international rectifier
 irf540z.pdf

PD - 94644 IRF540Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 29.5m 175 C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 34A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes t

 8.6. Size:1312K  international rectifier
 irf540pbf.pdf

PD - 94848 IRF540PbF Lead-Free 11/17/03 Document Number 91021 www.vishay.com 1 IRF540PbF Document Number 91021 www.vishay.com 2 IRF540PbF Document Number 91021 www.vishay.com 3 IRF540PbF Document Number 91021 www.vishay.com 4 IRF540PbF Document Number 91021 www.vishay.com 5 IRF540PbF Document Number 91021 www.vishay.com 6 IRF540PbF TO-220AB Package Outline

 8.7. Size:125K  international rectifier
 irf540ns.pdf

PD - 91342 IRF540NS IRF540NL Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 100V Fast Switching Fully Avalanche Rated RDS(on) = 44m Description G Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing ID = 33A S techniques to achieve extremely low on-r

 8.8. Size:302K  international rectifier
 irf540z irf540zs irf540zl.pdf

PD - 94758 IRF540Z AUTOMOTIVE MOSFET IRF540ZS IRF540ZL Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 26.5m G Description ID = 36A Specifically designed for Automotive applications, S this HEXFET Power MOSFE

 8.9. Size:302K  international rectifier
 irf540zpbf.pdf

PD - 94758 IRF540Z AUTOMOTIVE MOSFET IRF540ZS IRF540ZL Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 26.5m G Description ID = 36A Specifically designed for Automotive applications, S this HEXFET Power MOSFE

 8.10. Size:1411K  international rectifier
 irf540spbf.pdf

PD- 95983 IRF540SPbF Lead-Free 12/21/04 Document Number 91022 www.vishay.com 1 IRF540SPbF Document Number 91022 www.vishay.com 2 IRF540SPbF Document Number 91022 www.vishay.com 3 IRF540SPbF Document Number 91022 www.vishay.com 4 IRF540SPbF Document Number 91022 www.vishay.com 5 IRF540SPbF Document Number 91022 www.vishay.com 6 IRF540SPbF Peak Diode Recovery

 8.11. Size:279K  international rectifier
 irf540nlpbf irf540nspbf.pdf

PD - 95130 IRF540NSPbF IRF540NLPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 44m l Lead-Free G Description Advanced HEXFET Power MOSFETs from ID = 33A International Rectifier utilize advanced processing S techniques to achi

 8.12. Size:153K  international rectifier
 irf540npbf.pdf

PD - 94812 IRF540NPbF HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 44m Fast Switching G Fully Avalanche Rated ID = 33A Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

 8.13. Size:196K  international rectifier
 irf540s irf540spbf.pdf

IRF540S, SiHF540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Surface Mount RDS(on) ( )VGS = 10 V 0.077 Available in Tape and Reel Qg (Max.) (nC) 72 Dynamic dV/dt Rating Qgs (nC) 11 Repetitive Avalanche Rated Qgd (nC) 32 175 C Operating Temperature Configuration Single Fa

 8.14. Size:376K  international rectifier
 irf540zlpbf irf540zspbf.pdf

PD - 95531A IRF540ZPbF IRF540ZSPbF IRF540ZLPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 26.5m G Lead-Free ID = 36A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremel

 8.15. Size:177K  international rectifier
 irf540.pdf

 8.16. Size:99K  international rectifier
 irf540n.pdf

PD - 91341B IRF540N HEXFET Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 44m G Fast Switching Fully Avalanche Rated ID = 33A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan

 8.17. Size:184K  international rectifier
 irf540s.pdf

 8.18. Size:88K  philips
 irf540 s 1.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF540, IRF540S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 23 A g RDS(ON) 77 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope us

 8.19. Size:481K  st
 irf540 irf541 irf542 irf543-fi.pdf

 8.20. Size:53K  st
 irf540.pdf

IRF540 IRF540FI N - CHANNEL100V - 00.50 - 30A - TO-220/TO-220FI POWER MOSFET TYPE VDSS RDS(on) ID IRF540 100 V

 8.21. Size:146K  fairchild semi
 irf540.pdf

 8.22. Size:256K  fairchild semi
 irf540a.pdf

IRF540A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area TO-220 175 C Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Sour

 8.23. Size:112K  fairchild semi
 irf540 rf1s540sm.pdf

IRF540, RF1S540SM Data Sheet January 2002 28A, 100V, 0.077 Ohm, N-Channel Power Features MOSFETs 28A, 100V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.077 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avala

 8.24. Size:951K  samsung
 irf540a.pdf

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximu

 8.25. Size:202K  vishay
 irf540 sihf540.pdf

IRF540, SiHF540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.077 RoHS* 175 C Operating Temperature Qg (Max.) (nC) 72 COMPLIANT Fast Switching Qgs (nC) 11 Ease of Paralleling Qgd (nC) 32 Simple Drive Requirements Configuration Single Complian

 8.26. Size:702K  infineon
 auirf540z auirf540zs.pdf

AUIRF540Z AUTOMOTIVE GRADE AUIRF540ZS Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 175 C Operating Temperature 21m Fast Switching max. 26.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 36A Automotive Qualified * Description D

 8.27. Size:2432K  kexin
 irf540ns.pdf

SMD Type MOSFET N-Channel MOSFET IRF540NS (KRF540NS) TO-263 Unit mm 9.65 (Min) 10.67 (Max) Features 5.33 (Min) VDS (V) = 100V 90 93 ID = 33 A (VGS = 10V) RDS(ON) 44m (VGS = 10V) 6.22 (min) Fast Switching 4.06 (Min) 4.83 (Max) 1.14 (Min) 1.40 (Max) 1.65 (max) D 1.27 1.78 1.14 1.40 0.43 0.63 G 1 Gate 0.51 0.99 2 Drain 2.54 3 Sour

 8.28. Size:676K  slkor
 irf540ns irf540n.pdf

IRF540N/NS 100V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) TO-263 Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking IRF540N TO-220 IRF540N IRF540NS TO-263 IRF540NS Absolute Maxim

 8.29. Size:661K  cn evvo
 irf540n.pdf

R IRF540N N-Ch 100V Fast Switching MOSFETs Super Low Gate Charge Product Summary Excellent Cdv/dt effect decline Green Device Available Advanced high cell density Trench BVDSS RDSON ID technology 100V 47m 27A Description TO220 Pin Configuration The IRF540N is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for

 8.30. Size:2107K  cn vbsemi
 irf540zp.pdf

IRF540ZP www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.018 at VGS = 10 V 100 70a COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters TO-220AB D G G D S S Top View N-Channel MOSFET ABSOLUTE MA

 8.31. Size:1657K  cn vbsemi
 irf540nstrpbf.pdf

IRF540NSTRPBF www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 45 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 40 COMPLIANT D D2PAK (TO-263) G D G S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C,

 8.32. Size:817K  cn vbsemi
 irf540n.pdf

IRF540N www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.032 at VGS = 10 V 45 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 40 COMPLIANT D TO-220AB G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unl

 8.33. Size:881K  cn vbsemi
 irf540s.pdf

IRF540S www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 45 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 40 COMPLIANT D D2PAK (TO-263) G D G S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless

 8.34. Size:942K  cn minos
 irf540n.pdf

100V N-Channel Power MOSFET DESCRIPTION The IRF540N uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. Application Power switching application Hard switched and High frequency circuits Uninterruptible power supply KEY CHARACTERISTICS VDS = 100V,ID=35A RDS(ON)

 8.35. Size:255K  inchange semiconductor
 irf540nl.pdf

Isc N-Channel MOSFET Transistor IRF540NL FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100

 8.36. Size:251K  inchange semiconductor
 irf540z.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF540Z IIRF540Z FEATURES Static drain-source on-resistance RDS(on) 0.0265 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

 8.37. Size:257K  inchange semiconductor
 irf540ns.pdf

Isc N-Channel MOSFET Transistor IRF540NS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 8.38. Size:256K  inchange semiconductor
 irf540zl.pdf

Isc N-Channel MOSFET Transistor IRF540ZL FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 8.39. Size:258K  inchange semiconductor
 irf540zs.pdf

Isc N-Channel MOSFET Transistor IRF540ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 8.40. Size:242K  inchange semiconductor
 irf540npbf.pdf

INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF540NPBF FEATURES Drain Current I = 33A@ T =25 D C Static Drain-Source On-Resistance R = 44m (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed especially for high voltage,high speed applications, such as off-line switchi

 8.41. Size:227K  inchange semiconductor
 irf540.pdf

isc N-Channel Mosfet Transistor IRF540 FEATURES Low R DS(on) V Rated at 20V GS Silicon Gate for Fast Switching Speed Rugged Low Drive Requirements Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC moto

 8.42. Size:244K  inchange semiconductor
 irf540n.pdf

isc N-Channel MOSFET Transistor IRF540N IIRF540N FEATURES Static drain-source on-resistance RDS(on) 0.044 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 8.43. Size:283K  inchange semiconductor
 irf540a.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF540A FEATURES Static drain-source on-resistance RDS(on) 52m 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies. ABSOLUTE MAXIMUM RATINGS(T =25