FTK4015D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FTK4015D
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 23.7 nS
   Cossⓘ - Capacitancia de salida: 376 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0236 Ohm
   Paquete / Cubierta: TO252

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FTK4015D Datasheet (PDF)

..1. Size:375K first silicon
ftk4015d.pdf

SEMICONDUCTORFTK4015DTECHNICAL DATAMain Product Characteristics: VDSS -40V D RDS(on) 11m (typ.) GID 20A SSchematic diagram DFeatures and Benefits: Advanced trench MOSFET process technology S Special designed for PWM, load switching and GTO-252 top viewgeneral purpose applications Ultra low on-resistance with low gate charge High Power and current

9.1. Size:373K first silicon
ftk40p04d.pdf

SEMICONDUCTORFTK40P04DTECHNICAL DATAFTK40P04 P-Channel Power MOSFET AIDESCRIPTION CJThe FTK40P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. DIM MILLIMETERSA 6 50 0 2B 5 60 0 2This device is well suited for high current load applications. C 5 20 0 2D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MA

9.2. Size:578K first silicon
ftk4004.pdf

SEMICONDUCTORFTK4004TECHNICAL DATAFeathers: ID=200A Advanced trench process technology BV=40V Special designed for Convertors and power controls Rdson=4 mmax. High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The FTK4004 is a new generation of high voltage and low curre

9.3. Size:342K first silicon
ftk40n10d.pdf

SEMICONDUCTORFTK40N10DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION DIM MILLIMETERSThis advanced high voltage MOSFET is designed to stand high A 6 50 0 2B 5 60 0 2C 5 20 0 2energy in the avalanche mode and switch efficiently. D 1 50 0 2E 2 70 0 2F 2 30 0 1This new high energy device also offers a drainHH 1 00 MAXI 2 30

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