FTK4015D Todos los transistores

Introduzca al menos 3 números o letras

FTK4015D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FTK4015D

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 75 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 20 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 23.7 nS

Conductancia de drenaje-sustrato (Cd): 376 pF

Resistencia drenaje-fuente RDS(on): 0.0236 Ohm

Empaquetado / Estuche: TO252

Búsqueda de reemplazo de MOSFET FTK4015D

 

FTK4015D Datasheet (PDF)

1.1. ftk4015d.pdf Size:375K _first_silicon

FTK4015D
FTK4015D

SEMICONDUCTOR FTK4015D TECHNICAL DATA Main Product Characteristics: VDSS -40V D RDS(on) 11mΩ (typ.) G ID -20A S Schematic diagram D Features and Benefits: Advanced trench MOSFET process technology S Special designed for PWM, load switching and G TO-252 top view general purpose applications Ultra low on-resistance with low gate charge High Power and current

5.1. ftk40p04d.pdf Size:373K _first_silicon

FTK4015D
FTK4015D

SEMICONDUCTOR FTK40P04D TECHNICAL DATA FTK40P04 P-Channel Power MOSFET A I DESCRIPTION C J The FTK40P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. DIM MILLIMETERS A 6 50 ± 0 2 B 5 60 ± 0 2 This device is well suited for high current load applications. C 5 20 ± 0 2 D 1 50 ± 0 2 E 2 70 ± 0 2 F 2 30 ± 0 1 H H 1 00 MA

5.2. ftk4004.pdf Size:578K _first_silicon

FTK4015D
FTK4015D

SEMICONDUCTOR FTK4004 TECHNICAL DATA Feathers: ID=200A Advanced trench process technology BV=40V Special designed for Convertors and power controls Rdson=4 mΩ(max.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The FTK4004 is a new generation of high voltage and low curre

5.3. ftk40n10d.pdf Size:342K _first_silicon

FTK4015D
FTK4015D

SEMICONDUCTOR FTK40N10D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION DIM MILLIMETERS This advanced high voltage MOSFET is designed to stand high A 6 50 ± 0 2 B 5 60 ± 0 2 C 5 20 ± 0 2 energy in the avalanche mode and switch efficiently. D 1 50 ± 0 2 E 2 70 ± 0 2 F 2 30 ± 0 1 This new high energy device also offers a drain H H 1 00 MAX I 2 30

Otros transistores... FTK3610 , FTK3615 , FTK3620 , FTK3N80I , FTK3N80D , FTK3N80P , FTK3N80F , FTK4004 , IRFB3306 , FTK40N10D , FTK40P04D , FTK4406 , FTK4407 , FTK4409 , FTK4410 , FTK4410D , FTK4414 .

 


FTK4015D
  FTK4015D
  FTK4015D
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: IRLZ34SPBF | IRLZ34S | IRLZ34PBF | IRLZ34NSPBF | IRLZ34NPBF | IRLZ34NLPBF | IRLZ34L | IRLZ44NSPBF | IRLZ44NPBF | IRLZ44NLPBF | IRLZ44ZSPBF | IRLZ44ZPBF | IRLZ44ZLPBF | IRLZ44SPBF | IRLZ44S |

Introduzca al menos 1 números o letras