FTK4407 Todos los transistores

 ..1. Size:372K  first silicon
 ftk4407.pdf

SEMICONDUCTOR FTK4407 TECHNICAL DATA P-Channel Power MOSFET DESCRIPTION SOP-8 The FTK4407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). The device is ideal for load switch and battery protection applications D D D D 8 7 6 5 APPLICATIONS Battery protection applications 1 2 3 4 S S S G Load switch MARKING Q440

 8.1. Size:396K  first silicon
 ftk4406.pdf

SEMICONDUCTOR FTK4406 TECHNICAL DATA N-Channel Power MOSFET SOP-8 DESCRIPTION The FTK4406 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). D The device is ideal for load switch and battery protection applications D D D 8 5 7 6 APPLICATIONS 1 2 3 4 Battery protection applications S S G S Load switch MARKING Q44

 8.2. Size:430K  first silicon
 ftk4409.pdf

SEMICONDUCTOR FTK4409 TECHNICAL DATA Small Signal MOSFET 25 V, 0.75 A, Single, N-Channel, ESD Protection, SC-70/SOT-323 Features Advance Planar Technology for Fast Switching, Low RDS(on) 3 Higher Efficiency Extending Battery Life This is a Pb-Free Device 2 1 SOT 323 Applications Boost and Buck Converter Load Switch Battery Protection V(BR)DSS RDS(on) T

 9.1. Size:231K  first silicon
 ftk4414.pdf

SEMICONDUCTOR FTK4414 TECHNICAL DATA D DESCRIPTION The FTK4414 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES D D D D VDS = 30V,ID = 8.5A 8 7 6 5 RDS(ON)

 9.2. Size:505K  first silicon
 ftk4410d.pdf

SEMICONDUCTOR FTK4410D TECHNICAL DATA N-Channel MOSFET A I DESCRIPTION C J The FTK410D uses advanced trench te chnology to provide excellent RDS(ON) and low gate charge. DIM MILLIMETERS This device is suitable for use as a load switch A 6 50 0 2 B 5 60 0 2 or in PWM applications. C 5 20 0 2 D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MAX I 2 30 0

 9.3. Size:423K  first silicon
 ftk4435.pdf

SEMICONDUCTOR FTK4435 TECHNICAL DATA D DESCRIPTION The FTK4435 uses advanced trench technology to G provide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S Schematic diagram D D D D GENERAL FEATURES 7 6 5 8 VDS = -30V,ID = -9.1A RDS(ON)

 9.4. Size:496K  first silicon
 ftk4438.pdf

SEMICONDUCTOR FTK4438 TECHNICAL DATA DESCRIPTION The FTK4438 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Schematic diagram D D D D GENERAL FEATURES 7 6 5 8 VDS = 60V, ID = 8.2A RDS(ON)

 9.5. Size:474K  first silicon
 ftk4410.pdf

SEMICONDUCTOR FTK4410 TECHNICAL DATA DESCRIPTION N-Channel MOSFET The FTK4410 uses advanced trench technology to provide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). Schematic diagram D D D D GENERAL FEATURES 7 6 5 8 VDS = 30V,I = 7.5A D RDS(ON)

 9.6. Size:437K  first silicon
 ftk4459.pdf

SEMICONDUCTOR FTK4459 TECHNICAL DATA D DESCRIPTION The FTK4459 uses advanced trench technology to G provide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S Schematic diagram D D D D GENERAL FEATURES 7 6 5 8 VDS = -30V,ID = -6.5A RDS(ON)