FTK4409 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTORFTK4409TECHNICAL DATASmall Signal MOSFET25 V, 0.75 A, Single, N-Channel, ESD Protection, SC-70/SOT-323Features Advance Planar Technology for Fast Switching, Low RDS(on)3 Higher Efficiency Extending Battery Life This is a Pb-Free Device 21SOT 323Applications Boost and Buck Converter Load Switch Battery ProtectionV(BR)DSS RDS(on) T

SEMICONDUCTOR FTK4406TECHNICAL DATAN-Channel Power MOSFETSOP-8DESCRIPTION The FTK4406 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).DThe device is ideal for load switch and battery protection applications D D D8 57 6APPLICATIONS 1 2 3 4 Battery protection applicationsS S GS Load switch MARKING Q44

SEMICONDUCTOR FTK4407TECHNICAL DATAP-Channel Power MOSFETDESCRIPTION SOP-8 The FTK4407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).The device is ideal for load switch and battery protection applications D D D D8 7 6 5APPLICATIONS Battery protection applications1 2 3 4S S S G Load switch MARKING Q440

SEMICONDUCTOR FTK4414 TECHNICAL DATADDESCRIPTIONThe FTK4414 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURESD D D D VDS = 30V,ID = 8.5A 8 7 6 5RDS(ON)

SEMICONDUCTORFTK4410DTECHNICAL DATAN-Channel MOSFET AIDESCRIPTIONCJThe FTK410D uses advanced trench te chnology to provide excellent RDS(ON) and low gate charge. DIM MILLIMETERSThis device is suitable for use as a load switch A 6 50 0 2B 5 60 0 2or in PWM applications. C 5 20 0 2D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAXI 2 30 0

SEMICONDUCTOR FTK4435TECHNICAL DATA DDESCRIPTION The FTK4435 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S Schematic diagramD D D DGENERAL FEATURES 7 6 5 8 VDS = -30V,ID = -9.1A RDS(ON)

SEMICONDUCTOR FTK4438TECHNICAL DATADESCRIPTION The FTK4438 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switchor in PWM applications.Schematic diagramD D D DGENERAL FEATURES 7 6 58 VDS = 60V, ID = 8.2A RDS(ON)

SEMICONDUCTOR FTK4410TECHNICAL DATADESCRIPTION N-Channel MOSFETThe FTK4410 uses advanced trench technology to provide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). Schematic diagramD D D DGENERAL FEATURES 7 6 58 VDS = 30V,I = 7.5A DRDS(ON)

SEMICONDUCTOR FTK4459TECHNICAL DATA DDESCRIPTION The FTK4459 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S Schematic diagramD D D DGENERAL FEATURES 7 6 5 8 VDS = -30V,ID = -6.5A RDS(ON)