FTK4414 Todos los transistores

 

FTK4414 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FTK4414
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.2 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
   Paquete / Cubierta: SOP8
     - Selección de transistores por parámetros

 

FTK4414 Datasheet (PDF)

 ..1. Size:231K  first silicon
ftk4414.pdf pdf_icon

FTK4414

SEMICONDUCTOR FTK4414 TECHNICAL DATADDESCRIPTIONThe FTK4414 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURESD D D D VDS = 30V,ID = 8.5A 8 7 6 5RDS(ON)

 8.1. Size:505K  first silicon
ftk4410d.pdf pdf_icon

FTK4414

SEMICONDUCTORFTK4410DTECHNICAL DATAN-Channel MOSFET AIDESCRIPTIONCJThe FTK410D uses advanced trench te chnology to provide excellent RDS(ON) and low gate charge. DIM MILLIMETERSThis device is suitable for use as a load switch A 6 50 0 2B 5 60 0 2or in PWM applications. C 5 20 0 2D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAXI 2 30 0

 8.2. Size:474K  first silicon
ftk4410.pdf pdf_icon

FTK4414

SEMICONDUCTOR FTK4410TECHNICAL DATADESCRIPTION N-Channel MOSFETThe FTK4410 uses advanced trench technology to provide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). Schematic diagramD D D DGENERAL FEATURES 7 6 58 VDS = 30V,I = 7.5A DRDS(ON)

 9.1. Size:423K  first silicon
ftk4435.pdf pdf_icon

FTK4414

SEMICONDUCTOR FTK4435TECHNICAL DATA DDESCRIPTION The FTK4435 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S Schematic diagramD D D DGENERAL FEATURES 7 6 5 8 VDS = -30V,ID = -9.1A RDS(ON)

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2N5115UBE3 | SMK0765F | PN4861 | IXFT26N50 | KP746V1 | 2N6904 | AM2334NE

 

 
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