FTK4459 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FTK4459

Código: Q4459

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.25 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 6.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 5.5 nS

Resistencia drenaje-fuente RDS(on): 0.046 Ohm

Empaquetado / Estuche: SOP8

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FTK4459 Datasheet (PDF)

1.1. ftk4459.pdf Size:437K _first_silicon

SEMICONDUCTOR FTK4459 TECHNICAL DATA D DESCRIPTION The FTK4459 uses advanced trench technology to G provide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). S Schematic diagram D D D D GENERAL FEATURES 7 6 5 8 ● VDS = -30V,ID = -6.5A RDS(ON) < 72mΩ @ VG

5.1. ftk4409.pdf Size:430K _first_silicon

SEMICONDUCTOR FTK4409 TECHNICAL DATA Small Signal MOSFET 25 V, 0.75 A, Single, N-Channel, ESD Protection, SC-70/SOT-323 Features • Advance Planar Technology for Fast Switching, Low RDS(on) 3 • Higher Efficiency Extending Battery Life • This is a Pb-Free Device 2 1 SOT– 323 Applications • Boost and Buck Converter • Load Switch • Battery Protection V(BR)DSS RDS(on) T

5.2. ftk4435.pdf Size:423K _first_silicon

SEMICONDUCTOR FTK4435 TECHNICAL DATA D DESCRIPTION The FTK4435 uses advanced trench technology to G provide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). S Schematic diagram D D D D GENERAL FEATURES 7 6 5 8 ● VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VG

5.3. ftk4406.pdf Size:396K _first_silicon

SEMICONDUCTOR FTK4406 TECHNICAL DATA N-Channel Power MOSFET SOP-8 DESCRIPTION The FTK4406 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). D The device is ideal for load switch and battery protection applications D D D 8 5 7 6 APPLICATIONS 1 2 3 4 Battery protection applications S S G S Load switch MARKING Q44

5.4. ftk4407.pdf Size:372K _first_silicon

SEMICONDUCTOR FTK4407 TECHNICAL DATA P-Channel Power MOSFET DESCRIPTION SOP-8 The FTK4407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). The device is ideal for load switch and battery protection applications D D D D 8 7 6 5 APPLICATIONS Battery protection applications 1 2 3 4 S S S G Load switch MARKING Q440

5.5. ftk4438.pdf Size:496K _first_silicon

SEMICONDUCTOR FTK4438 TECHNICAL DATA DESCRIPTION The FTK4438 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Schematic diagram D D D D GENERAL FEATURES 7 6 5 8 ● VDS = 60V, ID = 8.2A RDS(ON) < 30mΩ @ VGS=4.5V Q4438 RDS(ON) < 22mΩ @ VGS=10V 1 3 4 2 ● High

5.6. ftk4414.pdf Size:231K _first_silicon

SEMICONDUCTOR FTK4414 TECHNICAL DATA D DESCRIPTION The FTK4414 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES D D D D ● VDS = 30V,ID = 8.5A 8 7 6 5 RDS(ON) < 40mΩ @ VGS=4.5V RDS(ON) < 26mΩ @ VGS=10V 4414 ● High P

5.7. ftk4410d.pdf Size:505K _first_silicon

SEMICONDUCTOR FTK4410D TECHNICAL DATA N-Channel MOSFET A I DESCRIPTION C J The FTK410D uses advanced trench te chnology to provide excellent RDS(ON) and low gate charge. DIM MILLIMETERS This device is suitable for use as a load switch A 6 50 ± 0 2 B 5 60 ± 0 2 or in PWM applications. C 5 20 ± 0 2 D 1 50 ± 0 2 E 2 70 ± 0 2 F 2 30 ± 0 1 H H 1 00 MAX I 2 30 ± 0

5.8. ftk4410.pdf Size:474K _first_silicon

SEMICONDUCTOR FTK4410 TECHNICAL DATA DESCRIPTION N-Channel MOSFET The FTK4410 uses advanced trench technology to provide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Schematic diagram D D D D GENERAL FEATURES 7 6 5 8 ● VDS = 30V,I = 7.5A D RDS(ON) < 20mΩ

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

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