IRF540NS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF540NS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 130 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 33 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 250 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.044 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET IRF540NS
IRF540NS Datasheet (PDF)
irf540ns.pdf
PD - 91342IRF540NSIRF540NL Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating Temperature VDSS = 100V Fast Switching Fully Avalanche RatedRDS(on) = 44mDescription GAdvanced HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processing ID = 33AStechniques to achieve extremely low on-r
irf540nlpbf irf540nspbf.pdf
PD - 95130IRF540NSPbFIRF540NLPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 44ml Lead-FreeGDescriptionAdvanced HEXFET Power MOSFETs from ID = 33AInternational Rectifier utilize advanced processing Stechniques to achi
irf540ns irf540nl.pdf
PD - 91342BIRF540NSIRF540NLl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 44mDescription GAdvanced HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processing ID = 33AStechniques to achieve extremely l
irf540ns.pdf
SMD Type MOSFETN-Channel MOSFETIRF540NS (KRF540NS)TO-263Unit:mm 9.65 (Min)10.67 (Max) Features5.33 (Min) VDS (V) = 100V 90 ~ 93 ID = 33 A (VGS = 10V) RDS(ON) 44m (VGS = 10V)6.22 (min) Fast Switching 4.06 (Min) 4.83 (Max) 1.14 (Min) 1.40 (Max)1.65 (max)D1.27~1.781.14~1.400.43~0.63G 1 Gate0.51~0.992 Drain 2.543 Sour
irf540ns irf540n.pdf
IRF540N/NS100V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) TO-263 Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking IRF540N TO-220 IRF540N IRF540NS TO-263 IRF540NS Absolute Maxim
irf540ns.pdf
Isc N-Channel MOSFET Transistor IRF540NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
irf540nstrpbf.pdf
IRF540NSTRPBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V45RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V40COMPLIANTDD2PAK (TO-263)GDGSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C,
irf540npbf.pdf
PD - 94812IRF540NPbFHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 44m Fast SwitchingG Fully Avalanche RatedID = 33A Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely l
irf540n.pdf
PD - 91341BIRF540NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 44mG Fast Switching Fully Avalanche RatedID = 33ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan
irf540npbf.pdf
PD - 94812IRF540NPbFHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 44m Fast SwitchingG Fully Avalanche RatedID = 33A Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely l
irf540n.pdf
RIRF540NN-Ch 100V Fast Switching MOSFETs Super Low Gate Charge Product Summary Excellent Cdv/dt effect decline Green Device Available Advanced high cell density Trench BVDSS RDSON ID technology 100V 47m 27A Description TO220 Pin Configuration The IRF540N is the high cell density trenchedN-ch MOSFETs, which provide excellent RDSON and gate charge for
irf540n.pdf
IRF540Nwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.032 at VGS = 10 V45RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V40COMPLIANTDTO-220AB GSG D STop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unl
irf540nl.pdf
Isc N-Channel MOSFET Transistor IRF540NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100
irf540npbf.pdf
INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRF540NPBFFEATURESDrain Current I = 33A@ T =25D CStatic Drain-Source On-Resistance: R = 44m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationDESCRITIONDesigned especially for high voltage,high speed applications,such as off-line switchi
irf540n.pdf
isc N-Channel MOSFET Transistor IRF540NIIRF540NFEATURESStatic drain-source on-resistance:RDS(on) 0.044Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY
Otros transistores... IRF531 , IRF532 , IRF533 , IRF540 , IRF540A , IRF540FI , IRF540N , IRF540NL , STP75NF75 , IRF541 , IRF542 , IRF543 , IRF550A , IRF610 , IRF610A , IRF610S , IRF611 .
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