FTK4828F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FTK4828F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 5.5 nC
   trⓘ - Tiempo de subida: 2.3 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.056 Ohm
   Paquete / Cubierta: SOT89

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FTK4828F Datasheet (PDF)

..1. Size:312K first silicon
ftk4828f.pdf

SEMICONDUCTORFTK4828FTECHNICAL DATAACN-Channel MOSFET HGDIM MILLIMETERSA 4.70 MAX_B 2.50 0.20DESCRIPTIONC 1.70 MAXDDD 0.45 0.15/-0.10KE 4.25 MAX_The FTK4828F uses advancd trench technology to provide excellent F F F 1.50 0.10G 0.40 TYPH 1.7 MAXRDS(ON) and low gate charge. J 0.7 MINK 0.5 0.15/-0.101 2 3 This device is suitable for use as a lo

7.1. Size:323K first silicon
ftk4828d.pdf

SEMICONDUCTORFTK4828DTECHNICAL DATAN-Channel MOSFET AIDESCRIPTIONCJThe FTK4828D uses advancd trench technology to provide excellentRDS(ON) and low gate charge. This device is suitable for use as a load switch DIM MILLIMETERS or in PWM applications. A 6 50 0 2 B 5 60 0 2C 5 20 0 2D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAXI 2 30 0 2

7.2. Size:583K first silicon
ftk4828.pdf

SEMICONDUCTOR FTK4828TECHNICAL DATADual N-Channel MOSFET DESCRIPTIONThe FTK4828 uses advanced trench N-channel N-channel te chnology to provide excellent RDS(ON) and low gate charge. Schematic diagram This device is suitable for use as a load switch D 2 D 2 D 1 D 1or in PWM applications. 6 58 7Q48281 2 43 FEATURESS 2 G 2 G 1S 1 Marking and pin AssignmentV

8.1. Size:509K first silicon
ftk4822.pdf

SEMICONDUCTOR FTK4822TECHNICAL DATADual N-Channel MOSFET DESCRIPTIONThe FTK4822 uses advanced trench N-channel N-channel te chnology to provide excellent RDS(ON) and low gate charge. Schematic diagram This device is suitable for use as a load switch D 2 D 2 D 1 D 1or in PWM applications. 6 58 748221 2 43 FEATURESS 2 G 2 G 1S 1 Marking and pin AssignmentVD

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