2SK4213 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK4213
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 64 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 310 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de 2SK4213 MOSFET
2SK4213 Datasheet (PDF)
2sk4213.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK4213SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES Low on-state resistance RDS(on)1 = 6.0 m M
2sk4213-zk 2sk4213a-zk.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK4213SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES Low on-state resistance RDS(on)1 = 6.0 m M
2sk4213a.pdf

isc N-Channel MOSFET Transistor 2SK4213AFEATURESDrain Current : I = 64A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk4210.pdf

2SK4210Ordering number : ENA1517SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4210ApplicationsFeatures Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitD
Otros transistores... FTK4828F , FTK4953 , 2SJ463A , 2SK1723 , 2SK2769-01MR , 2SK3113 , 2SK3687-01MR , 2SK3919 , AON7506 , IRF260B , IRF260C , 2N3458 , 2N3459 , 2N3460 , 2SJ599 , 2SK1657 , FMH20N60S1 .
History: IPS80R2K0P7 | IRLML2803GPBF | FCMT180N65S3 | SFS06R10PF | APT1003RKLL | ME4425 | HSBA0048
History: IPS80R2K0P7 | IRLML2803GPBF | FCMT180N65S3 | SFS06R10PF | APT1003RKLL | ME4425 | HSBA0048



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