SST112 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SST112
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.36 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 35 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 35 V
|Id|ⓘ - Corriente continua de drenaje: 0.05 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 50 Ohm
Encapsulados: SOT23
Búsqueda de reemplazo de SST112 MOSFET
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SST112 datasheet
j111 j112 j113 sst111 sst112 sst113.pdf
J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 3 to 10 30 5 4 J/SST112 1 to 5 50 5 4 J/SST113 v 3 100 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance 111
sst111 sst112 sst113.pdf
N-Channel JFET Switch LLC J111 - J113 / SST111 SST113 FEATURES APPLICATIONS Low Cost Analog Switches Automated Insertion Package Choppers Low Insertion Loss Commutators No Offset or Error Voltage Generated By Closed Switch ABSOLUTE MAXIMUM RATINGS Purely Resistive - (T = 25oC unless otherwise specified) A High Isola
sst108 sst109 sst110.pdf
N-Channel JFET Switch LLC J108 J110 / SST108 SST110 FEATURES APPLICATIONS Low Cost Analog Switches Automated Insertion Package Choppers Low Insertion Loss Commutators No Offset or Error Voltages Generated by Closed Switch Low-Noise Audio Amplifiers Purely Resistive ABSOLUTE MAXIMUM RATINGS High Isolation
Otros transistores... FMH20N60S1 , IRF630B , IRFP264N , SM4912TSK , SST108 , SST109 , SST110 , SST111 , 5N60 , SST113 , SST404 , SST405 , SST406 , WCM2001 , WCM2002 , WCM2007 , WCM2068 .
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