WCM2007 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WCM2007
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.29 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 6 V
|Id|ⓘ - Corriente continua de drenaje: 0.79(0.5) A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.31(0.81) Ohm
Encapsulados: SOT563
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WCM2007 datasheet
wcm2007.pdf
WCM2007 WCM2007 N- and P-Channel, 20V, MOSFET Http //www.sh-willsemi.com V(BR)DSS RDS(on) Typical. ( ) 0.18@ 4.5V N-Channel 0.23@ 2.5V 20 V 0.30@ 1.8V ESD protection 0.45@-4.5V P-Channel 0.60@ -2.5V -20 V 0.75@ -1.8V SOT-563 ESD protection Descriptions D1 G2 S2 6 5 4 The WCM2007 is the N- and P-Channel enhancement MOS Field Effect Transistor as a singl
wcm2002.pdf
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wcm2001.pdf
WCM2001 WCM2001 N- and P-Channel Complementary, 20V, MOSFET Http //www.willsemi.com V(BR)DSS RDS(on) Typ. ( m ) 180 @ 4.5V N-Channel 225 @ 2.5V 20 V 280 @ 1.8V 85 @ -4.5V P-Channel 110 @ -2.5V -20 V 150 @ -1.8V D1 G2 S2 6 5 4 Descriptions The WCM2001 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single 1 2 3 package for DC-DC converter or Lo
wcm2079.pdf
WCM2079 WCM2079 N- and P-Channel Complementary, 20V,MOSFET http //www.sh-willsemi.com V (V) Typical R ( ) DS DS(on) N-Channel 0.020@V =10V GS 20 0.023@V =4.5V GS (4) (3) 0.028@V =-10V P-Channel GS (2) -20 0.035@V =-4.5V (1) GS SOP-8L Descriptions The WCM2079 is the N-Channel and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or le
Otros transistores... SST111, SST112, SST113, SST404, SST405, SST406, WCM2001, WCM2002, IRF2807, WCM2068, WNM07N60, WNM07N60F, WNM07N65, WNM07N65F, WNM12N65, WNM12N65F, WNM2016
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