WNMD2168 Todos los transistores

 

WNMD2168 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WNMD2168
   Código: 2168
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 5.1 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 8 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: TSSOP-8
 

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WNMD2168 Datasheet (PDF)

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WNMD2168

WNMD2168 WNMD2168 Dual N-Channel, 20V, 4.1A, Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) () 0.022@ VGS=4.5V 20 0.024@ VGS=3.1V 0.027@ VGS=2.5V Descriptions TSSOP-8LD1/D2 S2 S2 G28 7 6 5The WNMD2168 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device

 7.1. Size:1188K  willsemi
 wnmd2166.pdf pdf_icon

WNMD2168

WNMD2166WNMD2166Dual N-Channel, 20V, 4.0A, Power MOSFET Http//:www.willsemi.comVDS (V) Rds(on) () 0.022@ V =4.5V GS0.023@ V =3.7V GS20 0.024@ VGS=3.1V 0.027@ V =2.5V GSPackageDescriptionsG1 D1/D2 G26 5 4The WNMD2166 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate

 7.2. Size:1228K  willsemi
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WNMD2168

WNMD2167 WNMD2167 Dual N-Channel, 20V, 6.3A, Power MOSFET Http//:www.willsemi.com VDS (V) Typical Rds(on) () 0.016@ V =4.5V GS 0.0175@ V =3.8V GS20 0.018@ VGS=3.1V 0.020@ V =2.5V GSSOT-23-6L Descriptions G1 D1/D2 G25 46The WNMD2167 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON

 7.3. Size:1757K  willsemi
 wnmd2165.pdf pdf_icon

WNMD2168

WNMD2165 WNMD2165 Dual N-Channel, 60V, 0.32A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) Rds(on) () 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM Descriptions SOT-363 The WNMD2165 is Dual N-Channel enhancem -ent MOS Field Effect Transistor. Uses advanced D1 G2 S2trench technology and design to provide excellent 6 5 4RDS (ON) with low gate charge. This

MOSTRAR MÁS

Otros transistores... WNM6001 , WNMD2153 , WNMD2154 , WNMD2158 , WNMD2160 , WNMD2162 , WNMD2165 , WNMD2166 , 20N60 , WNMD2171 , WNMD2172 , WNMD2173 , WNMD2174 , WNMD2176 , WNMD2178 , WNMD2179 , WNMD3014 .

 

 
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