WNMD2176 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WNMD2176
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.9 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 2.6 A
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
Paquete / Cubierta: SOT23-6L
Búsqueda de reemplazo de MOSFET WNMD2176
WNMD2176 Datasheet (PDF)
wnmd2176.pdf
WNMD2176 WNMD2176 Dual N-Channel, 20V, 2.6A, Power MOSFET www.sh-willsemi.com VDS (V) Typical RDS(on) (m) 56@ VGS=4.5V 20 76@ VGS=2.5V ESD Protected SOT-23-6L Descriptions D1 S1 D26 5 4The WNMD2176 is N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.This device is suitab
wnmd2179.pdf
WNMD2179 WNMD2179 www.sh-willsemi.com Dual N-Channel, 20V, 6.3A, Power MOSFET VDS (V) Rds(on) ( )0.0175@ VGS=4.5V0.0195@ VGS=3.1V200.0215@ VGS=2.5VESD Rating: 2000V HBM TSOT-23-6L Descriptions G1 D1/D2 G26 5 4The WNMD2179 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate
wnmd2173.pdf
WNMD2173 WNMD2173 Dual N-Channel, 20V, 6A, Power MOSFET www.sh-willsemi.com Vsss (V) Typ Rss(on) (m) MOSFET2MOSFET126@ VGS=4.5V Gate 1 Gate 227@ VGS=4.0V Gate20 Protection30@ VGS=3.1V Diode33@ VGS=2.5V ESD Rating:2000V HBM Source 1 Source 2Descriptions Body DiodeThe WNMD2173 is Dual N-Channel enhancement CSP 4L MOS Field Effect Transistor and connect
wnmd2171.pdf
WNMD2171 WNMD2171 www.sh-willsemi.com Dual N-Channel, 20V, 6A, Power MOSFET MOSFET2MOSFET1Vsss (V) Typ Rss(on) (m) Gate 1 Gate 236@ VGS=4.5V Gate38@ VGS=4.0V Protection20 Diode41@ VGS=3.1V 43@ VGS=2.5V ESD Rating:2000V HBM Source 1 Source 2Body DiodeDescriptions CSP 4L The WNMD2171 is Dual N-Channel enhancement MOS Field Effect Transistor and connec
wnmd2178.pdf
WNMD2178 WNMD2178 Dual N-Channel, 20V, 6A, Power MOSFET www.sh-willsemi.com Vsss (V) Typ Rss(on) (m) 23.5@ VGS=4.5V 24@ VGS=4.0V 20 326@ VGS=3.1V 429@ VGS=2.5V 2 ESD Rating:2000V HBM 1Descriptions Bottom View The WNMD2178 is Dual N-Channel enhancement DFN2X2-4L MOS Field Effect Transistor and connecting the Drains on the circuit board is not required becaus
wnmd2174.pdf
WNMD2174 WNMD2174 Dual N-Channel, 12V, 6A, Power MOSFET www.sh-willsemi.com MOSFET2MOSFET1Vsss (V) Typ Rss(on) (m) Gate 1 Gate 219@ VGS=4.5V Gate20@ VGS=4.0V Protection12 Diode22@ VGS=3.1V 25@ VGS=2.5V ESD Rating:2000V HBM Source 1 Source 2Body DiodeDescriptions CSP 4L The WNMD2174 is Dual N-Channel enhancement MOS Field Effect Transistor and connecti
wnmd2172.pdf
WNMD2172 WNMD2172 Dual N-Channel, 20V, 7.0A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) Rds(on) () 0.015@ VGS=4.5V 0.0155@ VGS=4.0V 20 0.017@ VGS=3.1V 0.018@ VGS=2.5V TSSOP-8L 0.021@ VGS=1.8V D1/D2 S2 S2 G2ESD Protected 8 7 6 5Descriptions The WNMD2172 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to
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