WPM1483 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WPM1483
   Código: W83*
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.74 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.85 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET WPM1483

WPM1483 Datasheet (PDF)

..1. Size:817K willsemi
wpm1483.pdf

WPM1483WPM1483Single P-Channel, -12V, -3.5A, Power MOSFET Http//:www.sh-willsemi.comVDS (V) Typical Rds(on) ()0.031@ VGS=4.5V-12 0.040@ VGS=2.5V0.056@ VGS=1.8VSOT-23DescriptionsThe WPM1483 is P-Channel enhancementMOS Field Effect Transistor. Uses advanced trenchtechnology and design to provide excellent RDS (ON)with low gate charge. This device is suitable f

8.1. Size:1149K willsemi
wpm1485.pdf

WPM1485 WPM1485 Single P-Channel, -12V, -7.4A, Power MOSFET Http//:www.willsemi.com V (V) Rds(on) () DS 0.016@ V =-4.5VGS -12 0.022@ V =-2.5VGS 0.032@ V =-1.8VGS DFN22-6L Descriptions D D S 6 5 4 The WPM1485 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench D technology and design to provide excellent RDS (ON) S with low

8.2. Size:502K willsemi
wpm1480.pdf

WPM1480 WPM1480 Http://www.sh-willsemi.com Single P-Channel, -20 V, -1.5 A,Power Mosfet Description 3The WPM1480 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is 1suitable for use in DC-DC conversion applications. Standard 2Product WPM1480 is Pb-free. SC-70/SOT-323Features V R Typ (BR)DSS DS(on) 20

8.3. Size:1057K willsemi
wpm1481.pdf

WPM1481 WPM1481 Single P-Channel, -12V, -5.1A, Power MOSFET Http://www.sh-willsemi.com V (V) Typical Rds(on) () I (A)DS D 0.024@ V = - 4.5V -5.5 GS -12 0.032@ V = - 2.5V -4.0 GS 0.047@ V = - 1.8V -2.5 GS DFN2*2-6L Descriptions D D S 6 5 4 The WPM1481 is P-Channel enhancement MOS D Field Effect Transistor. Uses advanced trench technology and design to provi

8.4. Size:635K willsemi
wpm1488.pdf

WPM1488WPM1488Single P-Channel, -12V, -1.4A, Power MOSFET www.sh-willsemi.comVDS (V) Typical Rds(on) () ID (A) 0.080@ VGS=4.5V -1.2 -12 0.086@ VGS=3.6V -1.0 0.105@ VGS=2.5V -1.0 SOT-323DescriptionsThe WPM1488 is P-Channel enhancementMOS Field Effect Transistor. Uses advancedtrench technology and design to provide excellentRDS (ON) with low gate charge. This de

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