WPM2014 Todos los transistores

 ..1. Size:612K  willsemi
 wpm2014.pdf

WPM2014 WPM2014 Single P-Channel, -20V, -4.9A, Power MOSFET Http// www.sh-willsemi.com VDS (V) Rds(on) ( ) 0.050 @ VGS= 4.5V -20 0.063 @ VGS= 2.5V 0.074 @ VGS = 1.8V DFN2x2-6L Descriptions D D S 6 5 4 The WPM2014 is P-Channel enhancement MOS D Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) S with low gate charge. This

 8.1. Size:807K  willsemi
 wpm2015.pdf

WPM2015 WPM2015 Http //www.sh-willsemi.com Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( ) 0.081@ VGS= 4.5V -20 0.103@ VGS= 2.5V SOT-23 Descriptions D 3 The WPM2015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use 12 in DC-D

 8.2. Size:628K  willsemi
 wpm2019.pdf

WPM2019 WPM2019 Http //www.sh-willsemi.com Single P-Channel, -20V, -0.73A, Power MOSFET VDS (V) Rds(on) ( ) D 0.480@ VGS= 4.5V -20 0.620@ VGS= 2.5V S 0.780@ VGS= 1.8V G SOT-523 Descriptions The WPM2019 is P-Channel enhancement MOS D 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is sui

 8.3. Size:84K  tysemi
 wpm2015.pdf

Product specification WPM2015 Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( ) 0.081@ VGS= 4.5V -20 0.103@ VGS= 2.5V SOT-23 Descriptions D The WPM2015 is P-Channel enhancement 3 MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power s

 8.4. Size:1569K  kexin
 wpm2015.pdf

SMD Type MOSFET P-Channel MOSFET WPM2015 (KPM2015) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-20V ID =-2.4 A 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 110m (VGS =-4.5V) +0.1 1.9-0.1 RDS(ON) 150m (VGS =-2.5V) Supper high density cell design 1. Gate 2. Source D 3. Drain 3 1 2 G S Absolute Maximum Rating

 8.5. Size:284K  msksemi
 wpm2015-ms.pdf

www.msksemi.com WPM2015-MS Semiconductor Compiance APPLICATION Load Switch for Portable Devices DC/DC Converter FEATURE TrenchFET Power MOSFET I V(BR)DSS RDS(on)MAX D 90 m @-4.5V -20 V -3 A 110 m @-2.5V 1. GATE 2. SOURCE 3. DRAIN SOT-23-3L Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V -20 DS V Gate-So

 8.6. Size:868K  cn vbsemi
 wpm2015-3-tr.pdf

WPM2015-3/TR www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICA