WPM2019 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WPM2019
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 5 V
   |Id|ⓘ - Corriente continua de drenaje: 0.62 A

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.81 Ohm
Paquete / Cubierta: SOT523

Búsqueda de reemplazo de MOSFET WPM2019

WPM2019 Datasheet (PDF)

..1. Size:628K willsemi
wpm2019.pdf

WPM2019 WPM2019 Http://www.sh-willsemi.com Single P-Channel, -20V, -0.73A, Power MOSFET VDS (V) Rds(on) ( )D0.480@ VGS= 4.5V-20 0.620@ VGS= 2.5VS0.780@ VGS= 1.8VGSOT-523 DescriptionsThe WPM2019 is P-Channel enhancement MOS D3Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is sui

8.1. Size:612K willsemi
wpm2014.pdf

WPM2014WPM2014Single P-Channel, -20V, -4.9A, Power MOSFET Http//:www.sh-willsemi.comVDS (V) Rds(on) ()0.050 @ VGS=4.5V-20 0.063 @ VGS=2.5V0.074 @ VGS=1.8VDFN2x2-6LDescriptionsD DS6 5 4The WPM2014 is P-Channel enhancement MOS DField Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)Swith low gate charge. This

8.2. Size:807K willsemi
wpm2015.pdf

WPM2015WPM2015Http://www.sh-willsemi.com Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( ) 0.081@ VGS= 4.5V-200.103@ VGS= 2.5VSOT-23 DescriptionsD3The WPM2015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use 12in DC-D

8.3. Size:84K tysemi
wpm2015.pdf

Product specificationWPM2015Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( )0.081@ VGS= 4.5V-200.103@ VGS= 2.5VSOT-23 DescriptionsDThe WPM2015 is P-Channel enhancement 3MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, power s

8.4. Size:1569K kexin
wpm2015.pdf

SMD Type MOSFETP-Channel MOSFETWPM2015 (KPM2015)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-2.4 A1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 110m (VGS =-4.5V)+0.11.9-0.1 RDS(ON) 150m (VGS =-2.5V) Supper high density cell design1. Gate2. SourceD3. Drain31 2G S Absolute Maximum Rating

8.5. Size:284K msksemi
wpm2015-ms.pdf

www.msksemi.comWPM2015-MSSemiconductorCompianceAPPLICATION Load Switch for Portable Devices DC/DC ConverterFEATURETrenchFET Power MOSFETIV(BR)DSS RDS(on)MAX D90 m@-4.5V-20 V-3 A110 m@-2.5V1. GATE2. SOURCE3. DRAINSOT-23-3LMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage V -20DSVGate-So

8.6. Size:868K cn vbsemi
wpm2015-3-tr.pdf

WPM2015-3/TRwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICA

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: