WPM2031 Todos los transistores

 ..1. Size:724K  willsemi
 wpm2031.pdf

WPM2031 WPM2031 Single P-Channel, -20V, -0.65A, Power MOSFET Http //www.sh-willsemi.com VDS (V) Rds(on) ( ) 0.495@ VGS= 4.5V D -20 0.665@ VGS= 2.5V S 0.882@ VGS= 1.8V G ESD Protected SOT-723 Descriptions D The WPM2031 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low

 8.1. Size:280K  willsemi
 wpm2037.pdf

WPM2037 WPM2037 Single P-Channel, -20V, -3.6A , Power MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.047@ VGS= 4.5V -20 0.060@ VGS= 2.5V 0.076@ VGS= 1.8V SOT-23-6L Descriptions S D D The WPM2037 is P-Channel enhancement MOS 6 5 4 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitabl

 9.1. Size:914K  willsemi
 wpm2006.pdf

WPM2006 WPM2006 Power MOSFET and Schottky Diode Features Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low VF Schottky DFN2*2 -6L Applications Li--Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered Products 1

 9.2. Size:612K  willsemi
 wpm2014.pdf

WPM2014 WPM2014 Single P-Channel, -20V, -4.9A, Power MOSFET Http// www.sh-willsemi.com VDS (V) Rds(on) ( ) 0.050 @ VGS= 4.5V -20 0.063 @ VGS= 2.5V 0.074 @ VGS = 1.8V DFN2x2-6L Descriptions D D S 6 5 4 The WPM2014 is P-Channel enhancement MOS D Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) S with low gate charge. This

 9.3. Size:1966K  willsemi
 wpm2048.pdf

WPM2048 WPM2048 Single P-Channel, -20V, -2.2A, Power MOSFET www.sh-willsemi.com VDS (V) Rds(on) (m ) 96@ VGS=-4.5V -20 135@ VGS=-2.5V SOT-23 Descriptions D 3 The WPM2048 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conver

 9.4. Size:807K  willsemi
 wpm2015.pdf

WPM2015 WPM2015 Http //www.sh-willsemi.com Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( ) 0.081@ VGS= 4.5V -20 0.103@ VGS= 2.5V SOT-23 Descriptions D 3 The WPM2015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use 12 in DC-D

 9.5. Size:1387K  willsemi
 wpm2087.pdf

WPM2087 WPM2087 Single P-Channel, -20V, -4.3A, Power MOSFET Http //www.sh-willsemi.com VDS (V) Typical RDS(on) (m ) 34@ V =-4.5V GS -20 39 @ V =-3.1V GS 45 @ V =-2.5V GS SOT-23 Descriptions D 3 The WPM2087 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This dev

 9.6. Size:628K  willsemi
 wpm2019.pdf

WPM2019 WPM2019 Http //www.sh-willsemi.com Single P-Channel, -20V, -0.73A, Power MOSFET VDS (V) Rds(on) ( ) D 0.480@ VGS= 4.5V -20 0.620@ VGS= 2.5V S 0.780@ VGS= 1.8V G SOT-523 Descriptions The WPM2019 is P-Channel enhancement MOS D 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is sui

 9.7. Size:1181K  willsemi
 wpm2083.pdf

WPM2083 WPM2083 Single P-Channel, -20V, -2.4A, Power MOSFET Http //www.sh-willsemi.com VDS (V) Typical RDS(on) (m ) D D D D 81 @ VGS=-4.5V -20 S S S S 110 @ VGS=-2.5V G G G G SOT-23 Descriptions D 3 The WPM2083 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate char

 9.8. Size:199K  willsemi
 wpm2009d.pdf

WPM2009D WPM2009D -20V, -4A, 42m , 2.0W, DFN3x3, P-MOSFET Http //www.willsemi.com Bottom Descriptions This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance. WPM2009D is enhancement power MOSFET with 2.0W power DFN3x3-8L dissipation mounting 1 in2 pad in a DFN3x3 package. This device is suited for high power charging cir

 9.9. Size:2102K  willsemi
 wpm2005b.pdf

WPM2005B WPM2005B Power MOSFET and Schottky Diode Features DFN3 2-8L Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low VF Schottky Applications Li--Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered Products MOS

 9.10. Size:1354K  willsemi
 wpm2049.pdf

WPM2049 WPM2049 Single P-Channel, -20V, -0.51A, Power MOSFET Http //www.sh-willsemi.com G VDS (V) Typical Rds(on) ( ) S 0.480@ VGS=-4.5V D -20 0.620@ VGS=-2.5V 0.780@ VGS=-1.8V DFN1006-3L Descriptions The WPM2049 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench D technology and design to provide excellent RDS (ON) with low gate charge. This device is s

 9.11. Size:263K  willsemi
 wpm2065.pdf

WPM2065 WPM2065 Single P-Channel, -20V, -6.9A, Power MOSFET Http //www.sh-willsemi.com D D G V (V) Typical Rds(on) ( ) DS 0.017@ V =-4.5V GS D S -20 0.022@ V =-2.5V GS D D S 0.032@ V =-1.8V GS ESD Rating 4000V HBM DFN2X2-6L Descriptions 1 6 D The WPM2065 is P-Channel enhancement D MOS Field Effect Transistor. Uses advanced trench D 2 5 D technology and design to provi

 9.12. Size:1141K  willsemi
 wpm2081.pdf

WPM2081 WPM2081 Single P-Channel, -20V, -3.2A, Power MOSFET Http //www.sh-willsemi.com VDS (V) Typical RDS(on) (m ) D D 43 @ VGS=-4.5V -20 S S 55 @ VGS=-2.5V G G SOT-23 Descriptions D The WPM2081 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is

 9.13. Size:852K  willsemi
 wpm2026.pdf

WPM2026 WPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET Http //www.sh-willsemi.com VDS (V) Rds(on) ( ) 0.056@ VGS= 4.5V -20 0.069@ VGS= 2.5V 0.086@ VGS= 1.8V SOT-23 Descriptions D The WPM2026 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitab

 9.14. Size:84K  tysemi
 wpm2015.pdf

Product specification WPM2015 Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( ) 0.081@ VGS= 4.5V -20 0.103@ VGS= 2.5V SOT-23 Descriptions D The WPM2015 is P-Channel enhancement 3 MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power s

 9.15. Size:110K  tysemi
 wpm2026.pdf

Product specification WPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET VDS (V) Rds(on) ( ) 0.056@ VGS= 4.5V -20 0.069@ VGS= 2.5V 0.086@ VGS= 1.8V SOT-23 Descriptions D 3 The WPM2026 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in

 9.16. Size:1569K  kexin
 wpm2015.pdf

SMD Type MOSFET P-Channel MOSFET WPM2015 (KPM2015) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-20V ID =-2.4 A 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 110m (VGS =-4.5V) +0.1 1.9-0.1 RDS(ON) 150m (VGS =-2.5V) Supper high density cell design 1. Gate 2. Source D 3. Drain 3 1 2 G S Absolute Maximum Rating

 9.17. Size:1397K  kexin
 wpm2005b.pdf

SMD Type MOSFET P+Schottky Hybrid MOSFET WPM2005B (KPM2005B) DFN3X2-8L Unit mm 0.35 (max) 0.05 (max) 0.24 (min) Features VDS (V) =-20V ID =-2.7 A (VGS =-10V) RDS(ON) 125m (VGS =-4.5V) 0.25 (max) 0.08 (min) RDS(ON) 160m (VGS =-2.5V) 0.65 BSC 0.80 0.1 3.00 BSC Ultra Low VF Schottky 1 8 A C 7 2 A C 6 S D 3 G D 4 5 Absolu

 9.18. Size:284K  msksemi
 wpm2015-ms.pdf

www.msksemi.com WPM2015-MS Semiconductor Compiance APPLICATION Load Switch for Portable Devices DC/DC Converter FEATURE TrenchFET Power MOSFET I V(BR)DSS RDS(on)MAX D 90 m @-4.5V -20 V -3 A 110 m @-2.5V 1. GATE 2. SOURCE 3. DRAIN SOT-23-3L Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V -20 DS V Gate-So

 9.19. Size:868K  cn vbsemi
 wpm2015-3-tr.pdf

WPM2015-3/TR www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICA