WPM3004 Todos los transistores

 ..1. Size:810K  willsemi
 wpm3004.pdf

WPM3004 WPM3004 Single P-Channel, -30V, -5.0A, Power MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.053@ VGS= 10.0V 0.053@ VGS= 10.0V -30 0.079@ VGS= 4.5V 0.079@ VGS= 4.5V SOP-8L Descriptions D D D D The WPM3004 is P-Channel enhancement MOS 8 7 6 5 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gat

 8.1. Size:920K  willsemi
 wpm3005.pdf

WPM3005 WPM3005 Single P-Channel, -30V, -4.1A, Power MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.057@ VGS= 10.0V 0.057@ VGS= 10.0V -30 0.083@ VGS= 4.5V 0.083@ VGS= 4.5V SOT-23-3L Descriptions D 3 The WPM3005 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This devi

 8.2. Size:293K  tysemi
 wpm3005.pdf

Product specification WPM3005 Single P-Channel, -30V, -4.1A, Power MOSFET VDS (V) Rds(on) ( ) 0.057@ VGS= 10.0V 0.057@ VGS= 10.0V -30 0.083@ VGS= 4.5V 0.083@ VGS= 4.5V SOT-23-3L Descriptions D 3 The WPM3005 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitab

 9.1. Size:514K  willsemi
 wpm3012.pdf

WPM3012 WPM3012 Http //www.sh-willsemi.com Single P-Channel, -30V, -3.1A, Power MOSFET VDS (V) Rds(on) ( ) 0.058@ VGS= 10V -30 0.080@ VGS= 4.5V SOT-23 Descriptions D 3 The WPM3012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) 1 2 with low gate charge. This device is suitable for use GS in D

 9.2. Size:508K  willsemi
 wpm3021.pdf

WPM3021 WPM3021 Single P-Channel, -30V, -13A, Power MOSFET Http //www.sh-willsemi.com V (V) Typical R (m ) DS DS(on) 11@ V =-10V GS -30 15 @ V =-5V GS (4) (3) (2) Descriptions (1) The WPM3021 is P-Channel enhancement MOS SOP-8L Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON) D D D D with low gate charge. Th

 9.3. Size:1838K  willsemi
 wpm3020.pdf

WPM3020 WPM3020 Single P-Channel, -30V, -3.8A, Power MOSFET Http //www.sh-willsemi.com VDS (V) Typical RDS(on) (m ) D D 43 @ VGS=-10V -30 S S 48 @ VGS=-4.5V G G SOT-23 Descriptions D The WPM3020 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is s

 9.4. Size:1172K  willsemi
 wpm3022.pdf

WPM3022 WPM3022 Single P-Channel, -30V, -3.1A, Power MOSFET Http //www.sh-willsemi.com VDS (V) Typical RDS(on) (m ) D D 56 @ VGS=-10V -30 S S 77 @ VGS=-4.5V G G SOT-23 Descriptions D The WPM3022 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is s

 9.5. Size:84K  tysemi
 wpm3012.pdf

Product specification WPM3012 Single P-Channel, -30V, -3.1A, Power MOSFET VDS (V) Rds(on) ( ) 0.058@ VGS= 10V -30 0.080@ VGS= 4.5V SOT-23 Descriptions D 3 The WPM3012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use 1 2 in DC-DC conversion, pow