WPM3401 Todos los transistores

 

WPM3401 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WPM3401

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 106 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.053 Ohm

Encapsulados: SOT23

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WPM3401 datasheet

 ..1. Size:2014K  willsemi
wpm3401.pdf pdf_icon

WPM3401

WPM3401 WPM3401 Single P-Channel, -30V, -4.6A, Power MOSFET www.sh-willsemi.com VDS (V) Max RDS (on) (m ) 53@ VGS=-10V -30 56@ VGS=-4.5V Descriptions SOT-23-3L The WPM3401 is the P-Channel logic enhancement D mode power field effect transistors are produced using 3 high cell density, DMOS trench technology. This high density process is especially tailored to minimiz

 ..2. Size:439K  tysemi
wpm3401.pdf pdf_icon

WPM3401

Product specification WPM3401 P-Channel Enhancement Mode MOSFET Description The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook co

 8.1. Size:1489K  willsemi
wpm3407.pdf pdf_icon

WPM3401

WPM3407 WPM3407 Single P-Channel, -30 V, -4.4A,Power MOSFET Http //www.sh-willsemi.com Description The WPM3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product 3 WPM3407 is Pb-free. 1 Features 2 SOT 23-3 V R Typ (BR)DSS DS(on) 36 m @ -10 V -30 V 53 m @ -4.5

 8.2. Size:689K  tysemi
wpm3407.pdf pdf_icon

WPM3401

Product specification WPM3407 Single P-Channel, -30 V, -4.4A,Power MOSFET Description The WPM3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for 3 use in DC-DC conversion applications. Standard Product WPM3407 is Pb-free. 1 Features 2 SOT 23-3 V R Typ (BR)DSS DS(on) 36 m @ -10 V -30 V pin connections 53 m

Otros transistores... WPM2048 , WPM2049 , WPM2065 , WPM2341 , WPM2341A , WPM3004 , WPM3005 , WPM3012 , AO3401 , WPM3407 , WPM4801 , WPM4803 , WPM5001 , WPM9435 , WPMD2008 , WPMD2010 , WPMD2011 .

 

 

 


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