WPM3401 Todos los transistores

 

WPM3401 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WPM3401
   Código: WP1*
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1.3 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 4.6 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1.5 V
   Carga de la puerta (Qg): 27 nC
   Tiempo de subida (tr): 18 nS
   Conductancia de drenaje-sustrato (Cd): 106 pF
   Resistencia entre drenaje y fuente RDS(on): 0.053 Ohm
   Paquete / Cubierta: SOT23

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WPM3401 Datasheet (PDF)

 ..1. Size:2014K  willsemi
wpm3401.pdf

WPM3401 WPM3401

WPM3401 WPM3401 Single P-Channel, -30V, -4.6A, Power MOSFET www.sh-willsemi.com VDS (V) Max RDS (on) (m) 53@ VGS=-10V -30 56@ VGS=-4.5V Descriptions SOT-23-3L The WPM3401 is the P-Channel logic enhancement D mode power field effect transistors are produced using 3 high cell density, DMOS trench technology. This high density process is especially tailored to minimiz

 ..2. Size:439K  tysemi
wpm3401.pdf

WPM3401 WPM3401

Product specificationWPM3401P-Channel Enhancement Mode MOSFET Description The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook co

 8.1. Size:1489K  willsemi
wpm3407.pdf

WPM3401 WPM3401

WPM3407WPM3407Single P-Channel, -30 V, -4.4A,Power MOSFETHttp://www.sh-willsemi.com DescriptionThe WPM3407 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This device is suitable foruse in DC-DC conversion applications. Standard Product3WPM3407 is Pb-free.1Features2SOT 23-3V R Typ(BR)DSS DS(on)36 m @ -10 V-30 V53 m @ -4.5

 8.2. Size:689K  tysemi
wpm3407.pdf

WPM3401 WPM3401

Product specificationWPM3407Single P-Channel, -30 V, -4.4A,Power MOSFETDescriptionThe WPM3407 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This device is suitable for3use in DC-DC conversion applications. Standard ProductWPM3407 is Pb-free.1Features2SOT 23-3V R Typ(BR)DSS DS(on)36 m @ -10 V-30 V pin connections : 53 m

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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