WPMD2012 Todos los transistores

 

WPMD2012 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WPMD2012
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.29 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 6 V
   |Id|ⓘ - Corriente continua de drenaje: 0.64 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.81 Ohm
   Paquete / Cubierta: SOT363

 Búsqueda de reemplazo de MOSFET WPMD2012

 

WPMD2012 Datasheet (PDF)

 ..1. Size:825K  willsemi
wpmd2012.pdf

WPMD2012
WPMD2012

WPMD2012WPMD2012Dual P-Channel, -20V, -0.64A, Small SignalMOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( )0.550@ VGS=-4.5V0.740@ VGS=-2.5V-200.910@ VGS=-1.8VSOT-363 DescriptionsD1 G2 S26 5 4The WPMD2012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device

 7.1. Size:376K  willsemi
wpmd2013.pdf

WPMD2012
WPMD2012

WPMD2013WPMD2013Dual P-Channel, -20V, -0.64A, Small SignalMOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( )0.550@ VGS=-4.5V0.740@ VGS=-2.5V-200.860@ VGS=-1.8VSOT-563 DescriptionsD1 G2 S26 5 4The WPMD2013 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device

 7.2. Size:194K  willsemi
wpmd2011.pdf

WPMD2012
WPMD2012

WPMD2011 WPMD2011Dual P-Channel -20V, -4.4A, 52m Power MOSFET Http://www.willsemi.com Rds(on) V(BR)DSS()0.052 @ -4.5V0.064 @ -2.5V -200.080 @ -1.8VDFN2x2-6L 0.090 @ -1.5VDescriptionD1The WPMD2011 is P-Channel enhancement dual S1 D11 6MOS Field Effect Transistor. Uses advanced trench G2technology and design to provide excellent RDS(ON) with G1 2 5low gat

 7.3. Size:1132K  willsemi
wpmd2010.pdf

WPMD2012
WPMD2012

WPMD2010 WPMD2010 Http://www.sh-willsemi.com Dual P-Channel, -20 V, -3.6A, Power MOSFET Description The WPMD2010 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WPMD2010 is Pb-free. Features V(BR)DSS RDS(on) Typ 75m@ -4.5V -20 V 101m@ -

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


WPMD2012
  WPMD2012
  WPMD2012
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top